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IPB80N04S2L03ATMA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 40V 80A TO263-3. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for IPB80N04S2L03ATMA1
- Description：MOSFET N-CH 40V 80A TO263-3
- Series：OptiMOS™
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR),Bulk
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：40 V
- Current - Continuous Drain (Id) @ 25°C：80A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：3.1mOhm @ 80A, 10V
- Vgs(th) (Max) @ Id：2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：213 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：6000 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：300W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：PG-TO263-3-2
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Single FETs, MOSFETs datasheet and documents for IPB80N04S2L03ATMA1
Single FETs, MOSFETs Overview
The IPB80N04S2L-03 is an N-channel OptiMOS power transistor in a PG-TO263-3-2 package. It features a 40V drain-source breakdown voltage and supports continuous drain currents up to 80A at 25°C. The device offers ultra-low on-state resistance, with maximum values of 3.1mΩ at VGS=10V and 4.2mΩ at VGS=4.5V. It operates within a temperature range of -55°C to +175°C and includes avalanche testing.
Single FETs, MOSFETs Feature Summary
- Automotive AEC-Q101 qualified for high reliability
- Logic level enhancement mode operation
- Ultra-low Rds(on) for efficient conduction
- 100% avalanche tested for robustness
Single FETs, MOSFETs Applications
- Automotive power distribution
- Motor control systems
- DC-DC converters
- Load switching applications
Single FETs, MOSFETs Procurement Notes
Verify the specific ordering code SP0002-20158 against your bill of materials. Confirm that the PG-TO263-3-2 footprint matches your PCB design. Ensure thermal management solutions account for the specified junction-to-case thermal resistance. Check for RoHS compliance status if required by your manufacturing process.
Single FETs, MOSFETs Selection Notes
Select this component when low on-resistance and automotive qualification are critical. Consider the logic-level gate drive capability for direct microcontroller interfacing. Evaluate thermal performance based on the specific PCB copper area and cooling conditions defined in the datasheet.
Single FETs, MOSFETs Part Context
This part belongs to Infineon's OptiMOS family, designed for power efficiency. It utilizes advanced trench technology to minimize losses. The PG-TO263-3-2 package provides a balance between thermal performance and mounting flexibility for surface-mount applications.
Single FETs, MOSFETs Replacement Considerations
Check for compatible OptiMOS variants with similar voltage and current ratings. Verify pinout compatibility before substitution. Ensure replacement parts meet the same automotive qualification standards.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
