IPD040N03LF2SATMA1

$0.94

Description：IPD040N03LF2SATMA1
Series：StrongIRFET™ 2
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:aa0b3e2799f8 Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

IPD040N03LF2SATMA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is IPD040N03LF2SATMA1. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for IPD040N03LF2SATMA1

Description：IPD040N03LF2SATMA1
Series：StrongIRFET™ 2
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：20A (Ta), 73A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：4.05mOhm @ 40A, 10V
Vgs(th) (Max) @ Id：2.35V @ 30µA
Gate Charge (Qg) (Max) @ Vgs：41 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：1800 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：3W (Ta), 75W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：PG-TO252-3-34
Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63

Single FETs, MOSFETs datasheet and documents for IPD040N03LF2SATMA1

IPD040N03LF2SATMA1

Single FETs, MOSFETs Overview

The IPD040N03LF2SATMA1 is a StrongIRFET™ 2 N-channel power MOSFET rated for 30 V drain-source voltage. It features a maximum on-state resistance of 4.05 mΩ at 10 V gate drive and supports a continuous drain current of 73 A at 25 °C case temperature. The device utilizes a PG-TO252-3 surface-mount package with an exposed tab for thermal management. Key electrical parameters include a total gate charge of 21 nC at 10 V, a threshold voltage range of 1.35 V to 2.35 V, and a maximum operating junction temperature of 175 °C.

Single FETs, MOSFETs Feature Summary

Logic-level operation optimized for low gate drive voltages
100% avalanche tested for robustness in inductive switching applications
Qualified according to JEDEC standards for reliability

Single FETs, MOSFETs Applications

Low-side switching in DC-DC converters
Motor control circuits
Power distribution systems

Single FETs, MOSFETs Procurement Notes

Verify the component marking '040N03F2' against the datasheet to confirm authenticity. Ensure the ordering suffix matches the specified tape-and-reel packaging configuration. Confirm RoHS compliance and halogen-free status requirements align with project specifications before finalizing procurement orders.

Single FETs, MOSFETs Selection Notes

Select this component when a 30 V rating and logic-level gate compatibility are required. Evaluate the 4.05 mΩ on-resistance against thermal dissipation needs within the PG-TO252-3 package constraints. Consider the 175 °C junction temperature capability for high-temperature environments compared to standard 150 °C alternatives.

Single FETs, MOSFETs Part Context

This part belongs to Infineon's StrongIRFET™ 2 family, designed for high-efficiency power conversion. It serves as a successor or alternative to older OptiMOS generations, offering improved switching characteristics and lower gate charge values suitable for modern high-frequency power supply designs.