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Product Detailed Parameters
- Description：TRENCH 40<-<100V
- Series：-
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR)
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：-
- Current - Collector (Ic) (Max)：-
- Current - Collector Pulsed (Icm)：-
- Vce(on) (Max) @ Vge, Ic：-
- Power - Max：-
- Switching Energy：-
- Input Type：-
- Gate Charge：-
- Td (on/off) @ 25°C：-
- Test Condition：-
- Reverse Recovery Time (trr)：-
- Operating Temperature：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
- Grade：-
- Qualification：-
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Overview
The IPF011N08NM6ATMA1 is an N-channel power MOSFET from Infineon Technologies, belonging to the OptiMOS 6 product family. It features a drain-source voltage (VDS) of 80 V and a continuous drain current (ID) of 135 A at 25°C. The device exhibits a maximum on-resistance (RDS(on)) of 1.1 mΩ at VGS = 10 V. Packaged in PG-TDFEX-8, it supports high-frequency switching and synchronous rectification with optimized gate charge characteristics. The component operates within a junction temperature range of -55°C to +175°C and complies with RoHS standards.
Feature Summary
- Optimized for high-frequency switching and synchronous rectification applications
- Low figure of merit (FOM) combining low on-resistance and gate charge
- High avalanche energy rating for robust operation under stress
- Lead-free package compliant with IEC 61249-2-22 halogen-free requirements
Applications
- Server power supply units (PSU)
- Telecommunications infrastructure AC-DC conversion
- Synchronous rectification in DC-DC converters
- Battery management systems (BMS)
Procurement Notes
Verify the specific ordering suffix against official Infineon documentation to confirm package type and tape-and-reel specifications. Ensure compatibility with JEDEC moisture sensitivity level classifications for surface-mount assembly processes. Cross-reference the manufacturer part number with authorized distributor catalogs to validate authenticity and traceability before procurement.
Selection Notes
Select this component for designs requiring low conduction losses in 80 V systems. Evaluate thermal performance based on the TDFEX-8 package's thermal resistance characteristics. Compare the gate charge parameters against driver capabilities to ensure efficient switching transitions. Confirm that the 135 A current rating aligns with peak load requirements while accounting for derating at elevated temperatures.
Part Context
This part belongs to the OptiMOS 6 series, which represents Infineon's latest generation of standard planar MOSFET technology. The series targets industrial and consumer applications demanding high efficiency and compact form factors. It complements other variants in the 80 V portfolio by offering a balance between current handling capability and switching speed.
Replacement Considerations
Direct replacements should be sought within the OptiMOS 6 family or compatible StrongIRFET series parts with matching 80 V ratings and similar RDS(on) values. Verify pinout compatibility and thermal pad configurations when substituting. Consult official cross-reference lists for confirmed equivalents rather than assuming functional interchangeability.
