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IPG16N10S461AATMA1 is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET 2N-CH 100V 16A 8TDSON. Review the specifications below when checking this part for your BOM.
FET, MOSFET Arrays specifications for IPG16N10S461AATMA1
- Description：MOSFET 2N-CH 100V 16A 8TDSON
- Series：OptiMOS™
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：100V
- Current - Continuous Drain (Id) @ 25°C：16A
- Rds On (Max) @ Id, Vgs：61mOhm @ 16A, 10V
- Vgs(th) (Max) @ Id：3.5V @ 9µA
- Gate Charge (Qg) (Max) @ Vgs：7nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：490pF @ 25V
- Power - Max：29W
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Surface Mount, Wettable Flank
- Package / Case：8-PowerVDFN
- Supplier Device Package：PG-TDSON-8-10
- Grade：Automotive
- Qualification：AEC-Q101
FET, MOSFET Arrays datasheet and documents for IPG16N10S461AATMA1
FET, MOSFET Arrays Overview
The IPG16N10S461AATMA1 is a dual N-channel enhancement mode power transistor from the OptiMOS-T2 series. It features a PG-TDSON-8 package with a maximum drain-source voltage of 100 V and a continuous drain current of 16 A per channel at 25 °C. The device has a maximum on-state resistance of 61 mΩ at VGS=10 V. It supports an operating temperature range from -55 °C to +175 °C and is qualified under AEC-Q101 standards.
FET, MOSFET Arrays Feature Summary
- Dual N-channel configuration in a compact surface-mount package
- Qualified for automotive applications according to AEC-Q101
- Capable of high junction temperatures up to 175 °C
- Validated for 100% avalanche testing
FET, MOSFET Arrays Applications
- Automotive electronic systems
- Power management circuits
- Motor control applications
FET, MOSFET Arrays Procurement Notes
Verify the specific ordering suffix AA against official Infineon documentation to confirm exact packaging and reel specifications. Ensure compliance with RoHS directives and REACH SVHC requirements before integration into final assemblies. Confirm that the PG-TDSON-8 footprint matches the target PCB design constraints.
FET, MOSFET Arrays Selection Notes
Select this component when a dual N-channel MOSFET with 100 V rating is required in a small form factor. The low gate charge facilitates efficient switching performance. Verify thermal dissipation capabilities relative to the specific PCB copper area and cooling conditions defined in the datasheet.
FET, MOSFET Arrays Part Context
This part belongs to the OptiMOS-T2 family, designed for robust performance in automotive environments. It utilizes silicon technology to deliver reliable switching characteristics. The dual configuration allows for bridge or half-bridge topologies within a single package.
FET, MOSFET Arrays Replacement Considerations
IPG16N10S4-61
FET, MOSFET Arrays FAQ
What is the maximum pulsed drain current for one active channel?
The maximum pulsed drain current is 64 A.
Is the device suitable for high-temperature operation?
Yes, the device supports an operating and storage temperature range from -55 °C to +175 °C.
What is the typical gate charge value?
The typical total gate charge (Qg) is 5.4 nC at VDD=50 V and ID=16 A.
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