IPG16N10S4L61AATMA1

FET, MOSFET Arrays Overview

The IPG16N10S4L-61AATMA1 is a dual N-channel enhancement mode power transistor from the OptiMOS-T2 series. It features a PG-TDSON-8 package with an 8-pin surface mount configuration. The device supports a maximum drain-source voltage of 100 V and a continuous drain current of 16 A per channel at 25 °C. Maximum on-state resistance is 78 mΩ at VGS=4.5V and 61 mΩ at VGS=10V. Total power dissipation reaches 29 W, with junction temperatures operating between -55 °C and +175 °C.

FET, MOSFET Arrays Feature Summary

• Dual N-channel logic level enhancement mode architecture
• Automotive grade qualification compliant with AEC-Q101 standards
• High thermal stability supporting up to 175 °C junction temperature
• Manufactured using green RoHS-compliant processes

FET, MOSFET Arrays Applications

• Automotive electronic systems requiring high reliability
• Low-side switching applications in power distribution
• General purpose power conversion circuits

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering suffix against official Infineon documentation to confirm exact packaging and reel specifications. Confirm that the component meets all required automotive quality standards for your intended application environment before finalizing procurement orders.

FET, MOSFET Arrays Selection Notes

Select this component when a dual N-channel MOSFET with 100 V rating and low gate charge is required. Ensure the PCB footprint matches the PG-TDSON-8 dimensions. Consider the thermal resistance characteristics for heat dissipation requirements in enclosed automotive environments.

FET, MOSFET Arrays Part Context

This part belongs to the OptiMOS-T2 family, designed for optimized switching performance and low conduction losses. It utilizes advanced trench technology to achieve high current density within a compact surface-mount package suitable for automated assembly processes.

FET, MOSFET Arrays Replacement Considerations

Consult official Infineon cross-reference lists for verified substitutes. Do not assume pin-compatible alternatives without verifying electrical parameters and thermal characteristics against the original datasheet.

FET, MOSFET Arrays FAQ

Is the IPG16N10S4L-61A qualified for automotive applications?

Yes, the component is explicitly qualified according to the AEC-Q101 standard.

What is the maximum operating junction temperature?

The device supports a maximum operating and storage temperature range up to +175 °C.

Does the device support avalanche operation?

Yes, the datasheet specifies that the transistors are 100% avalanche tested.