SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
IPG20N04S408AATMA1 is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET 2N-CH 40V 20A 8TDSON. Review the specifications below when checking this part for your BOM.
The IPG20N04S408AATMA1 is a dual N-channel power MOSFET from Infineon Technologies, utilizing OptiMOS-T2 technology. It features a 40V drain-source voltage rating and a continuous drain current of 20A at 25°C. The device offers a maximum on-resistance of 8.2mΩ at 10V gate drive. Packaged in a PG-TDSON-8 (SSO8) format with wettable flanks, it supports an operating junction temperature range from -55°C to +175°C. The component holds AEC-Q101 automotive qualification.
Verify the specific suffix against official documentation to confirm exact electrical tolerances and packaging variations. Confirm current lifecycle status as components may transition to non-recommended-for-new-design states. Ensure compatibility with standard surface-mount assembly processes given the TDSON-8 footprint requirements.
Select this component when a dual N-channel topology is required in a small form factor. The 40V rating suits low-voltage automotive and industrial systems. Consider the 8.2mΩ on-resistance for efficiency targets. Verify thermal management needs against the 54W power dissipation capability in the target PCB layout.
This part belongs to Infineon's OptiMOS-T2 family, designed for automotive and general-purpose power switching. The PG-TDSON-8 package provides a balance between thermal performance and board space savings compared to larger packages like DPAK or TO-220.
Consult official substitution guides for equivalent parts. Direct replacements must match the 40V/20A specifications and TDSON-8 footprint. Verify pinout compatibility before implementation.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.