IPG20N04S408ATMA1

FET, MOSFET Arrays Overview

The IPG20N04S4-08 is a dual N-channel enhancement mode MOSFET from the OptiMOS-T2 series, housed in a PG-TDSON-8 package. It features a maximum drain-source voltage of 40 V and a continuous drain current of 20 A per channel at 25 °C. The device exhibits a maximum on-state resistance of 7.6 mΩ at VGS=10 V. It supports an operating temperature range from -55 °C to +175 °C and is qualified under AEC-Q101 standards.

FET, MOSFET Arrays Feature Summary

• Dual N-channel configuration with normal level enhancement mode operation
• AEC-Q101 automotive qualification for reliability
• High thermal performance with junction-to-case resistance of 2.3 K/W
• 100% avalanche tested for robustness

FET, MOSFET Arrays Applications

• Automotive power management systems
• Low-side switching applications
• DC-DC converter circuits
• Motor control interfaces

FET, MOSFET Arrays Procurement Notes

Verify component authenticity through authorized Infineon distributors or certified suppliers. Confirm the specific ordering suffix matches the required package and tape/reel specifications. Check for RoHS compliance status and ensure storage conditions adhere to MSL1 requirements prior to soldering. Validate that the part number corresponds exactly to the PG-TDSON-8 variant.

FET, MOSFET Arrays Selection Notes

Select this component for designs requiring low on-resistance and high current handling in automotive environments. Ensure gate drive voltages meet the 10 V threshold for optimal RDS(on) performance. Consider thermal management strategies given the 65 W power dissipation capability. Verify PCB footprint compatibility with the PG-TDSON-8 outline dimensions.

FET, MOSFET Arrays Part Context

This part belongs to Infineon's OptiMOS-T2 family, designed for efficient power switching. It utilizes silicon technology to achieve low conduction losses. The dual-channel architecture allows for compact circuit layouts in bridge or half-bridge configurations. It serves as a specialized solution for automotive-grade applications demanding high reliability.

FET, MOSFET Arrays Replacement Considerations

Direct substitutes include other OptiMOS-T2 dual N-channel MOSFETs with similar voltage and current ratings. Verify pinout compatibility and thermal characteristics before substitution. Cross-reference datasheets for equivalent RDS(on) and gate charge values to maintain circuit performance.