IPG20N04S408BATMA1

FET, MOSFET Arrays Overview

The IPG20N04S408BATMA1 is a dual N-channel enhancement mode MOSFET from Infineon's OptiMOS-T2 series. It features a PG-TDSON-8 (PowerVDFN-8) surface-mount package with wettable flanks for improved solder joint inspection. The device supports a drain-source voltage of 40 V and a continuous drain current of 20 A at 25°C. Key electrical parameters include a maximum on-resistance of 8 mΩ at 10 V gate drive, a typical gate charge of 10.5 nC, and an input capacitance of 3050 pF. It operates within a temperature range of -55°C to +175°C and holds AEC-Q101 automotive qualification.

FET, MOSFET Arrays Feature Summary

• Dual N-channel configuration in a compact PowerVDFN-8 package with wettable side walls for enhanced reliability and visual inspection.
• OptiMOS-T2 technology delivers low on-resistance and optimized gate charge for efficient switching performance.
• Automotive-grade qualification ensures robustness and long-term stability in demanding electronic environments.

FET, MOSFET Arrays Applications

• Automotive power distribution units
• DC-DC converter modules
• Motor control circuits

FET, MOSFET Arrays Procurement Notes

Verify the specific suffix 'BATMA1' against official Infineon documentation to confirm the exact pinout and thermal characteristics, as variations exist within the OptiMOS-T2 family. Confirm that the component status is active, as some similar part numbers may be marked as Not Recommended for New Designs. Ensure the procurement source provides valid traceability documents required for automotive applications.

FET, MOSFET Arrays Selection Notes

Select this component when a dual N-channel MOSFET with high current capability and low on-resistance is required in a small footprint. The PG-TDSON-8 package offers superior thermal performance compared to standard SO-8 packages. Consider the 40 V rating and 20 A current limit to ensure adequate headroom for the target application's voltage and load requirements.

FET, MOSFET Arrays Part Context

This part belongs to the OptiMOS-T2 family, designed for automotive and industrial applications requiring high efficiency and reliability. It complements other variants like IPG20N04S4-12 and IPG20N04S4L-18A by offering a specific combination of low Rds(on) and gate charge in a standardized automotive package.

FET, MOSFET Arrays Replacement Considerations

Direct substitutes include IPG20N04S4L-18A and IPG20N04S4-18A, which share similar electrical characteristics and packaging. Verify compatibility regarding gate threshold voltage and thermal resistance before substitution.