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IPG20N04S409AATMA1 is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET 2N-CH 40V 20A 8TDSON. Review the specifications below when checking this part for your BOM.
The IPG20N04S4-09A is a dual N-channel enhancement mode power transistor from the OptiMOS-T2 family. It features a PG-TDSON-8 package with a maximum drain-source voltage of 40 V and a continuous drain current of 20 A per channel at 25 °C. The device has a maximum on-state resistance of 8.6 mΩ at VGS=10 V. It supports an operating temperature range from -55 °C to +175 °C, offers 100% avalanche testing, and is qualified to AEC-Q101 standards.
Verify the specific ordering suffix against official Infineon documentation to confirm exact electrical tolerances and packaging specifications. Confirm that the component meets the required AEC-Q101 qualification level for your target application environment. Ensure compatibility with standard reflow soldering profiles up to 260 °C peak temperature during assembly.
Select this component when a dual N-channel MOSFET with low on-resistance is required for space-constrained designs. The PG-TDSON-8 package provides efficient thermal dissipation suitable for high-current applications. Consider the 40 V rating and 20 A current capability to ensure adequate headroom for system voltage and load requirements.
This part belongs to the OptiMOS-T2 series, designed for efficient power switching in automotive and industrial environments. The technology focuses on minimizing conduction losses while maintaining robust reliability. The dual configuration allows for independent control of two channels within a single footprint, simplifying board layout.
Consult official cross-reference lists for verified substitutes. Ensure any replacement maintains identical pinout, voltage ratings, and thermal characteristics.
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