IPG20N04S412AATMA1

FET, MOSFET Arrays Overview

The IPG20N04S412AATMA1 is a dual N-channel power MOSFET from Infineon Technologies, utilizing OptiMOS-T2 technology. It features a 40V drain-source voltage rating and a continuous drain current of 20A. The device offers a maximum on-resistance of 12mΩ at 10V gate drive. Packaged in a PG-TDSON-8 (SSO8) format, it supports an operating junction temperature range from -55°C to +175°C. The component holds AEC-Q101 automotive qualification.

FET, MOSFET Arrays Feature Summary

• Dual N-channel configuration within a compact surface-mount package
• OptiMOS-T2 technology for optimized switching performance
• Automotive-grade reliability with AEC-Q101 qualification

FET, MOSFET Arrays Applications

• Automotive power distribution systems
• Low-side switching applications in vehicle electronics
• General purpose power management circuits requiring high efficiency

FET, MOSFET Arrays Procurement Notes

Verify the exact part number spelling against official Infineon documentation, as variations such as IPG20N04S4-12 or IPG20N04S4L07AATMA1 exist. Confirm the specific suffix indicates the correct on-resistance variant and packaging type. Check current lifecycle status, as some similar variants are marked as Not Recommended for New Designs. Ensure compatibility with required thermal and electrical specifications before procurement.

FET, MOSFET Arrays Selection Notes

Select this component for designs requiring a dual N-channel MOSFET with low on-resistance in a small footprint. The 40V rating suits 12V automotive systems. Compare total gate charge and thermal resistance against single-channel alternatives if space permits. Verify that the PG-TDSON-8 package meets PCB layout constraints and soldering requirements for the target application environment.

FET, MOSFET Arrays Part Context

This device belongs to the OptiMOS-T2 family, designed for automotive and industrial applications. It integrates two independent N-channel MOSFETs in one package to save board space. The series emphasizes low conduction losses and robust performance under varying thermal conditions typical in automotive environments.

FET, MOSFET Arrays Replacement Considerations

Direct substitutes include IPG20N04S4-12 and IPG20N04S4L07AATMA1. Verify pinout compatibility and exact Rds(on) values when swapping. Other OptiMOS-T2 devices in the same package may serve as functional replacements if electrical parameters align.