IPG20N04S4L07AATMA1

FET, MOSFET Arrays Overview

The IPG20N04S4L-07A is a dual N-channel logic level enhancement mode power transistor from Infineon's OptiMOS-T2 family. It features a PG-TDSON-8 package with a maximum drain-source voltage of 40 V and continuous drain current of 20 A per channel at 25°C. The device exhibits a maximum on-state resistance of 7.2 mΩ at VGS=10V and 9.2 mΩ at VGS=4.5V. It supports an operating temperature range of -55°C to +175°C, has a thermal resistance junction-to-case of 2.3 K/W, and total gate charge of 50 nC.

FET, MOSFET Arrays Feature Summary

• Dual N-channel configuration with logic-level enhancement mode operation
• Automotive grade qualification compliant with AEC-Q101 standards
• High reliability verified through 100% avalanche testing
• RoHS compliant green product design

FET, MOSFET Arrays Applications

• Automotive electronic systems requiring high reliability
• Low voltage power switching applications
• Logic level driven power control circuits

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering suffix against official Infineon documentation to confirm exact marking codes and packaging specifications. Confirm that the component meets all required automotive quality standards for the intended application environment. Ensure compatibility with automatic optical inspection processes during assembly.

FET, MOSFET Arrays Selection Notes

Select this component when a dual N-channel MOSFET with low on-resistance and automotive qualification is required. Consider the PG-TDSON-8 package dimensions for PCB layout constraints. Evaluate thermal management requirements based on the specified junction-to-case thermal resistance and operating temperature limits.

FET, MOSFET Arrays Part Context

This part belongs to the OptiMOS-T2 series of power transistors designed for efficient power switching. The technology focuses on minimizing conduction losses while maintaining robust performance in automotive environments. The dual channel architecture allows for compact designs in bridge or half-bridge configurations.

FET, MOSFET Arrays Replacement Considerations

Consult official Infineon documentation for confirmed substitute part numbers within the same product family or generation.