IPG20N04S4L08AATMA1

FET, MOSFET Arrays Overview

The IPG20N04S4L-08A is a dual N-channel enhancement mode MOSFET from the OptiMOS-T2 series, housed in a PG-TDSON-8 package. It features a maximum drain-source voltage of 40 V and continuous drain current of 20 A per channel at 25°C. The device exhibits a maximum on-resistance of 8.2 mΩ at VGS=10V and 17A. Total gate charge is typically 30 nC with a maximum of 39 nC. Thermal resistance junction-to-case is 2.8 K/W, supporting operation up to 175°C.

FET, MOSFET Arrays Feature Summary

• Dual N-channel logic level configuration for efficient switching control
• Automotive-grade qualification compliant with AEC-Q101 standards
• High thermal performance enabling operation up to 175°C junction temperature
• Robust avalanche capability verified through 100% single-pulse testing

FET, MOSFET Arrays Applications

• Automotive power distribution systems
• Low-side switching applications in vehicle electronics
• DC-DC converter circuits requiring high efficiency
• Motor control interfaces for automotive actuators

FET, MOSFET Arrays Procurement Notes

Verify component authenticity against Infineon official documentation before integration. Confirm that the specific ordering suffix matches the required package marking and electrical tolerances. Ensure supply chain sources provide valid traceability records. Check for any end-of-life notifications or recommended replacement notices from the manufacturer prior to final procurement decisions.

FET, MOSFET Arrays Selection Notes

Select this component for designs requiring dual-channel isolation within a compact surface-mount footprint. The low on-resistance supports high-current applications while maintaining thermal stability. Consider the AEC-Q101 qualification for automotive reliability requirements. Evaluate PCB layout constraints regarding the PG-TDSON-8 thermal pad requirements for optimal heat dissipation.

FET, MOSFET Arrays Part Context

This part belongs to Infineon's OptiMOS-T2 family, designed for automotive and industrial power switching. The technology utilizes silicon planar trench gate MOSFET structures. It serves as a specialized solution for applications demanding high reliability and low conduction losses in space-constrained environments.

FET, MOSFET Arrays Replacement Considerations

Consult official Infineon cross-reference guides for direct replacements. Verify pin compatibility and thermal characteristics when substituting.