IPG20N04S4L08ATMA1

$1.62

Description：MOSFET 2N-CH 40V 20A 8TDSON
Series：OptiMOS™

SKU:30e441d810f3 Category: FET, MOSFET Arrays Brand: Infineon Technologies

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Product introduction

IPG20N04S4L08ATMA1 is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET 2N-CH 40V 20A 8TDSON. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for IPG20N04S4L08ATMA1

Description：MOSFET 2N-CH 40V 20A 8TDSON
Series：OptiMOS™
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual)
FET Feature：Logic Level Gate
Drain to Source Voltage (Vdss)：40V
Current - Continuous Drain (Id) @ 25°C：20A
Rds On (Max) @ Id, Vgs：8.2mOhm @ 17A, 10V
Vgs(th) (Max) @ Id：2.2V @ 22µA
Gate Charge (Qg) (Max) @ Vgs：39nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：3050pF @ 25V
Power - Max：54W
Operating Temperature：-55°C ~ 175°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-PowerVDFN
Supplier Device Package：PG-TDSON-8-4
Grade：Automotive
Qualification：AEC-Q101

FET, MOSFET Arrays datasheet and documents for IPG20N04S4L08ATMA1

IPG20N04S4L08ATMA1

FET, MOSFET Arrays Overview

The IPG20N04S4L-08 is a dual N-channel logic level enhancement mode MOSFET from the OptiMOS-T2 series. It features a PG-TDSON-8 package with a maximum drain-source voltage of 40 V and continuous drain current of 20 A per channel. The device has a maximum on-state resistance of 8.2 mΩ at VGS=10 V and 17 A. It supports an operating temperature range from -55 °C to +175 °C, offers 100% avalanche testing, and is qualified under AEC-Q101 standards.

FET, MOSFET Arrays Feature Summary

Dual N-channel configuration in a compact surface-mount package
Logic-level gate drive capability for efficient switching
AEC-Q101 automotive qualification ensuring reliability
High thermal performance with 175 °C junction temperature rating

FET, MOSFET Arrays Applications

Automotive power distribution systems
DC-DC converter circuits
Motor control applications

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering suffix against official Infineon documentation to confirm exact electrical tolerances and packaging specifications. Confirm component availability status as manufacturing schedules may change. Ensure compliance with RoHS directives and REACH regulations prior to integration into final assemblies.

FET, MOSFET Arrays Selection Notes

Select this component for designs requiring low on-resistance and high current handling in automotive environments. Evaluate thermal management requirements based on the specified junction-to-case thermal resistance. Consider the logic-level gate threshold for compatibility with standard microcontroller or driver outputs.

FET, MOSFET Arrays Part Context

This part belongs to the OptiMOS-T2 family, designed for low-loss switching applications. It utilizes silicon technology within a PG-TDSON-8 footprint. The series emphasizes robustness through avalanche testing and automotive-grade quality assurance protocols.