IPG20N06S2L35AATMA1

$1.68

Description：MOSFET 2N-CH 55V 20A 8TDSON
Series：OptiMOS™

SKU:3bfdd34f261c Category: FET, MOSFET Arrays Brand: Infineon Technologies

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Product introduction

IPG20N06S2L35AATMA1 is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET 2N-CH 55V 20A 8TDSON. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for IPG20N06S2L35AATMA1

Description：MOSFET 2N-CH 55V 20A 8TDSON
Series：OptiMOS™
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual)
FET Feature：Logic Level Gate
Drain to Source Voltage (Vdss)：55V
Current - Continuous Drain (Id) @ 25°C：20A (Tc)
Rds On (Max) @ Id, Vgs：35mOhm @ 15A, 10V
Vgs(th) (Max) @ Id：2V @ 27µA
Gate Charge (Qg) (Max) @ Vgs：23nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：790pF @ 25V
Power - Max：65W
Operating Temperature：-55°C ~ 175°C (TJ)
Mounting Type：Surface Mount, Wettable Flank
Package / Case：8-PowerVDFN
Supplier Device Package：PG-TDSON-8-10
Grade：Automotive
Qualification：AEC-Q101

FET, MOSFET Arrays datasheet and documents for IPG20N06S2L35AATMA1

IPG20N06S2L35AATMA1

FET, MOSFET Arrays Overview

The IPG20N06S2L-35A is a dual N-channel logic level enhancement mode MOSFET from Infineon's OptiMOS family. It features a PG-TDSON-8 package with a maximum drain-source voltage of 55 V and a continuous drain current of 20 A per channel at 25°C. The device has a maximum on-state resistance of 35 mΩ at VGS=10V and 44 mΩ at VGS=4.5V. It supports an operating temperature range from -55°C to +175°C, offers a junction-to-case thermal resistance of 2.3 K/W, and includes avalanche testing compliance.

FET, MOSFET Arrays Feature Summary

Dual N-channel configuration in a compact surface-mount package
Optimized low on-state resistance for high efficiency
Qualified for automotive applications under AEC Q101 standards
Capable of handling single-pulse avalanche energy

FET, MOSFET Arrays Applications

Automotive power distribution systems
DC-DC converter circuits
Motor control applications

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering suffix against official documentation to confirm exact packaging and reel specifications. Ensure that the component meets the required automotive quality standards if deployed in vehicle electronics. Confirm compatibility with automated optical inspection processes during assembly. Validate thermal management requirements based on the specified junction-to-case resistance values.

FET, MOSFET Arrays Selection Notes

Select this component when a dual N-channel solution is required within a limited footprint. Consider the 55 V rating and 20 A current capacity for appropriate load matching. Evaluate the gate threshold voltage characteristics to ensure compatibility with available drive voltages. Assess the thermal performance requirements against the specified junction-to-case resistance.

FET, MOSFET Arrays Part Context

This part belongs to the OptiMOS Power-Transistor series by Infineon Technologies. It utilizes silicon technology and is designed for robust performance in demanding environments. The device is manufactured in accordance with green product guidelines and RoHS compliance standards.

FET, MOSFET Arrays Replacement Considerations

Consult official replacement lists or cross-reference guides provided by Infineon for verified substitutes. Do not assume functional equivalence with other manufacturers' parts without detailed parameter comparison.