IPG20N06S2L50AATMA1

FET, MOSFET Arrays Overview

The IPG20N06S2L-50A is a dual N-channel logic level enhancement mode MOSFET from Infineon's OptiMOS family. It features a PG-TDSON-8 package with a maximum drain-source voltage of 55 V and a continuous drain current of 20 A per channel at 25°C. The device has a maximum on-state resistance of 50 mΩ at VGS=10V and ID=15A, and a gate charge of 17 nC. It supports an operating temperature range of -55°C to +175°C and is qualified under AEC-Q101 standards.

FET, MOSFET Arrays Feature Summary

• Dual N-channel configuration in a compact surface-mount package
• Logic level gate drive capability for direct microcontroller interfacing
• Automotive-grade reliability with AEC-Q101 qualification
• High thermal performance supporting operation up to 175°C

FET, MOSFET Arrays Applications

• Automotive power distribution systems
• Low-side switching applications in vehicle electronics
• General purpose power management circuits
• Industrial motor control interfaces

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering suffix matches the required tape-and-reel quantity and packaging format. Confirm that the component meets RoHS compliance requirements for your assembly process. Ensure the PG-TDSON-8 footprint aligns with your PCB design guidelines. Check for any specific automotive quality certifications required by your supply chain.

FET, MOSFET Arrays Selection Notes

Select this component when a dual N-channel MOSFET with low on-resistance is needed for space-constrained designs. Consider the 55V rating for standard automotive bus voltages. Evaluate the thermal resistance values against your system's cooling capabilities. Compare gate charge specifications if high-frequency switching efficiency is critical.

FET, MOSFET Arrays Part Context

This part belongs to Infineon's OptiMOS power transistor series, designed for efficient power switching. The PG-TDSON-8 package offers improved thermal dissipation compared to traditional packages. It is engineered for robust performance in harsh environments typical of automotive and industrial applications.

FET, MOSFET Arrays Replacement Considerations

Direct replacements include IPG20N06S2L-35A and IPG20N06S2L-50. Verify pin compatibility and electrical parameters before substitution. Ensure the alternative part meets the same AEC-Q101 qualification status if used in automotive contexts.

FET, MOSFET Arrays FAQ

What is the maximum pulsed drain current for this device?

The maximum pulsed drain current is 80 A per channel.

Is this component suitable for high-temperature automotive environments?

Yes, it is AEC-Q101 qualified and supports junction temperatures up to 175°C.

How does the on-state resistance vary with gate voltage?

The maximum RDS(on) is 50 mΩ at VGS=10V and 60 mΩ at VGS=4.5V.