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IPG20N06S2L50ATMA1 is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET 2N-CH 55V 20A 8TDSON. Review the specifications below when checking this part for your BOM.
The IPG20N06S2L-50 is a dual N-channel logic level enhancement mode MOSFET from Infineon's OptiMOS family. It features a PG-TDSON-8 package with a maximum drain-source voltage of 55 V and a continuous drain current of 20 A per channel at 25°C. The device has a maximum on-state resistance of 50 mΩ at VGS=10V and ID=15A, and a total gate charge of 17 nC. It supports an operating temperature range from -55°C to +175°C, offers 51 W power dissipation, and is qualified to AEC-Q101 standards.
Verify the specific ordering suffix against official Infineon documentation to confirm exact packaging and tape-and-reel specifications. Ensure component authenticity through authorized channels. Confirm RoHS compliance status and check for any recent revision history updates that may affect pinout or electrical parameters before finalizing procurement orders.
Select this component when a dual N-channel solution is required within a small footprint. The 50 mΩ on-resistance provides a balance between conduction losses and cost. Verify that the 55 V breakdown voltage meets circuit requirements. Consider the 17 nC gate charge for driving capability limitations in high-frequency switching applications.
This part belongs to the OptiMOS™ Power-Transistor series designed for automotive and industrial applications. It utilizes silicon technology optimized for low on-resistance and fast switching speeds. The PG-TDSON-8 package allows for efficient heat dissipation while maintaining a small board area compared to traditional TO-220 packages.
Check for updated part numbers such as IPG20N06S2L-50A which may indicate minor revisions. Verify pin compatibility and electrical parameter equivalence before substitution. Consult Infineon's replacement guide for officially confirmed alternatives.
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