IPG20N06S2L65AATMA1

FET, MOSFET Arrays Overview

The IPG20N06S2L-65A is a dual N-channel logic level enhancement mode MOSFET from Infineon's OptiMOS family. It features a PG-TDSON-8 package with a maximum drain-source voltage of 55 V and continuous drain current of 20 A per channel at 25°C. The device has a maximum on-state resistance of 65 mΩ at VGS=10V and ID=15A, with a gate threshold voltage range of 1.2 V to 2.0 V. Total gate charge is typically 9.4 nC at 10 V. It supports an operating temperature range from -55°C to +175°C and is qualified to AEC-Q101 standards.

FET, MOSFET Arrays Feature Summary

• Dual N-channel configuration in a compact surface-mount package
• Logic level gate drive capability for direct microcontroller interfacing
• Automotive-grade reliability with AEC-Q101 qualification
• High thermal performance supporting operation up to 175°C junction temperature

FET, MOSFET Arrays Applications

• Automotive power distribution systems
• DC-DC converter circuits
• Motor control applications
• General purpose switching in automotive electronics

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering suffix matches the required tape and reel quantity or cut tape format. Confirm the component date code aligns with project requirements. Ensure the PG-TDSON-8 footprint matches the PCB design guidelines provided in the datasheet. Check for RoHS compliance status if restricted substances are a concern for the target market.

FET, MOSFET Arrays Selection Notes

Select this component when a dual N-channel solution is required within a small form factor. The 55 V rating suits low-voltage automotive bus architectures. Consider the 65 mΩ RDS(on) for efficiency targets at 15 A loads. Verify that the logic-level gate drive meets the system's available control voltage levels without requiring additional driver stages.

FET, MOSFET Arrays Part Context

This part belongs to the OptiMOS Power-Transistor series designed for robust automotive environments. It utilizes silicon technology optimized for low conduction losses and fast switching speeds. The dual configuration allows for half-bridge or synchronous rectifier topologies within a single package, reducing board space compared to discrete single-channel alternatives.

FET, MOSFET Arrays Replacement Considerations

Direct replacements must match the PG-TDSON-8 package, 55 V rating, and dual N-channel topology. Verify that any substitute maintains similar RDS(on) and gate charge characteristics to ensure compatible switching behavior and thermal performance in existing designs.