IPG20N06S2L65ATMA1

FET, MOSFET Arrays Overview

The IPG20N06S2L-65 is a dual N-channel logic level enhancement mode OptiMOS power transistor. It features a PG-TDSON-8 package and operates at junction temperatures up to 175°C. The device supports a continuous drain current of 20 A per channel and withstands a drain-source voltage of 55 V. Maximum on-state resistance is 65 mΩ at 10 V gate drive. It includes an integrated body diode with a forward voltage of 1.3 V maximum. The component is avalanche tested and qualified to AEC-Q101 standards.

FET, MOSFET Arrays Feature Summary

• Dual N-channel configuration with logic level gate drive capability
• AEC-Q101 automotive qualification for high reliability
• Integrated body diode with fast reverse recovery characteristics
• 100% avalanche tested for robustness under transient conditions

FET, MOSFET Arrays Applications

• Automotive power distribution systems
• Motor control applications requiring dual channels
• Low voltage DC-DC converter topologies
• Load switching in automotive electronic control units

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to ensure correct packaging and tape-and-reel specifications. Confirm that the requested part number matches the exact electrical parameters required for the design, as variations may exist within the product family. Cross-reference the datasheet revision date to ensure access to the most recent thermal and electrical characteristics before finalizing procurement orders.

FET, MOSFET Arrays Selection Notes

Select this component when a compact dual-channel solution is required for low-voltage automotive applications. The PG-TDSON-8 package offers efficient thermal dissipation for space-constrained designs. Ensure the gate drive voltage meets the minimum threshold for optimal on-state resistance performance. Consider the total power dissipation limits based on the specific PCB copper area and cooling conditions available in the target application environment.

FET, MOSFET Arrays Part Context

This device belongs to Infineon's OptiMOS power transistor portfolio, specifically designed for automotive-grade requirements. It utilizes trench technology to achieve low on-resistance and high switching efficiency. The dual-channel architecture allows for cost-effective implementation of half-bridge or synchronous rectifier configurations within a single small outline package.

FET, MOSFET Arrays Replacement Considerations

Consult official cross-reference lists for verified substitutes. Ensure any replacement maintains the same package footprint, pinout configuration, and voltage/current ratings. Verify that alternative components meet the same AEC-Q101 qualification standards if used in automotive contexts.

FET, MOSFET Arrays FAQ

Is the IPG20N06S2L-65 suitable for high-temperature automotive environments?

Yes, the device is rated for a junction temperature range of -55°C to +175°C and is qualified to AEC-Q101 standards.

What is the maximum pulsed drain current for this component?

The maximum pulsed drain current is specified as 80 A per channel under single pulse conditions.

Does the device include an internal body diode?

Yes, each channel includes an integrated body diode with a maximum forward voltage of 1.3 V and a reverse recovery charge of 28 nC.