IPG20N06S3L-23

Description：MOSFET 2N-CH 55V 20A 8TDSON
Series：OptiMOS™

SKU:9323499bb057 Category: FET, MOSFET Arrays Brand: Infineon Technologies

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Product introduction

IPG20N06S3L-23 is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET 2N-CH 55V 20A 8TDSON. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for IPG20N06S3L-23

Description：MOSFET 2N-CH 55V 20A 8TDSON
Series：OptiMOS™
Mfr：Infineon Technologies
Package：Tape & Reel (TR)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual)
FET Feature：Logic Level Gate
Drain to Source Voltage (Vdss)：55V
Current - Continuous Drain (Id) @ 25°C：20A
Rds On (Max) @ Id, Vgs：23mOhm @ 16A, 10V
Vgs(th) (Max) @ Id：2.2V @ 20µA
Gate Charge (Qg) (Max) @ Vgs：42nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：2950pF @ 25V
Power - Max：45W
Operating Temperature：-55°C ~ 175°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-PowerVDFN
Supplier Device Package：PG-TDSON-8-4
Grade：-
Qualification：-

FET, MOSFET Arrays datasheet and documents for IPG20N06S3L-23

IPG20N06S3L-23

FET, MOSFET Arrays Overview

The IPG20N06S3L-23 is a dual N-channel logic level enhancement mode power transistor from Infineon's OptiMOS-T series. It features a PG-TDSON-8-4 package with a maximum drain-source voltage of 55 V and a continuous drain current of 20 A per channel. The device has a maximum on-state resistance of 23 mΩ at VGS=10V. It supports a junction temperature range of -55°C to +175°C, offers 110 mJ single pulse avalanche energy, and includes an integrated body diode with a forward voltage of 1.3 V max.

FET, MOSFET Arrays Feature Summary

Dual N-channel configuration in a compact surface-mount package
Logic-level gate drive capability for direct microcontroller interfacing
Automotive-grade reliability with AEC-Q101 qualification
High thermal performance supporting operation up to 175°C

FET, MOSFET Arrays Applications

Automotive DC-DC converters
Motor control circuits
Power management systems
Synchronous rectification applications

FET, MOSFET Arrays Procurement Notes

Verify the specific suffix '23' against official Infineon documentation to confirm the exact RDS(on) specification of 23 mΩ. Ensure that the PG-TDSON-8-4 footprint matches your PCB layout requirements. Confirm AEC-Q101 compliance if the application requires automotive grade standards. Check for any RoHS compliance declarations relevant to your region.

FET, MOSFET Arrays Selection Notes

Select this component when a dual N-channel MOSFET with low on-resistance is required in a small form factor. The 55V rating suits 12V or 24V automotive systems. Consider the 23 mΩ RDS(on) for efficiency needs. Evaluate the thermal resistance of 3.3 K/W for heat dissipation planning. Compare gate charge values against driver capabilities.

FET, MOSFET Arrays Part Context

This part belongs to the OptiMOS-T family, designed for high efficiency and robustness. It utilizes Infineon's trench technology to achieve low conduction losses. The dual configuration allows for half-bridge or synchronous rectifier topologies within a single package, saving board space compared to discrete solutions.

FET, MOSFET Arrays Replacement Considerations

IPG20N06S3L-35A: Higher RDS(on) (35 mΩ). IPG20N06S2L-50: Higher RDS(on) (50 mΩ). Verify pinout compatibility and electrical parameters before substitution.