IPG20N06S415AATMA1

FET, MOSFET Arrays Overview

The IPG20N06S4-15A is a dual N-channel enhancement mode power transistor from Infineon's OptiMOS-T2 series. It features a PG-TDSON-8-10 package with a maximum drain-source voltage of 60 V and a continuous drain current of 20 A per channel at 25 °C. The device exhibits a maximum on-state resistance of 15.5 mΩ at VGS=10 V. It supports pulsed currents up to 80 A and operates within a junction temperature range of -55 °C to +175 °C. The component is AEC-Q101 qualified, ensuring reliability for automotive applications.

FET, MOSFET Arrays Feature Summary

• Dual N-channel configuration in a compact surface-mount package
• Optimized low on-state resistance for high efficiency
• Qualified for automotive environments under AEC-Q101 standards
• Robust avalanche capability verified through testing

FET, MOSFET Arrays Applications

• Automotive power distribution systems
• DC-DC converter circuits
• Motor control applications

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering suffix against official documentation to confirm exact marking codes and packaging specifications. Ensure compatibility with standard reflow soldering profiles up to 260 °C peak temperature. Confirm that the selected variant meets all required automotive qualification standards before integration into final designs.

FET, MOSFET Arrays Selection Notes

Select this component for designs requiring dual isolated channels in a small footprint. Evaluate thermal management requirements based on the specified junction-to-case thermal resistance. Consider the gate charge characteristics when designing drive circuits to optimize switching performance and minimize losses.

FET, MOSFET Arrays Part Context

This part belongs to the OptiMOS-T2 family, designed for low-voltage power switching. It utilizes advanced silicon technology to achieve high current density and low conduction losses. The PG-TDSON-8-10 package provides efficient thermal dissipation while maintaining a compact form factor suitable for space-constrained electronic assemblies.

FET, MOSFET Arrays Replacement Considerations

Consult official replacement guides for compatible alternatives. Verify pinout compatibility and electrical parameter equivalence before substitution.