FET, MOSFET Arrays IPG20N06S415ATMA1 product image

IPG20N06S415ATMA1

  • Description:MOSFET 2N-CH 60V 20A 8TDSON
  • Series:OptiMOS™

SKU:a81b633f4ddf Category: Brand:

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IPG20N06S415ATMA1 is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET 2N-CH 60V 20A 8TDSON. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for IPG20N06S415ATMA1

  • Description:MOSFET 2N-CH 60V 20A 8TDSON
  • Series:OptiMOS™
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 N-Channel (Dual)
  • FET Feature:-
  • Drain to Source Voltage (Vdss):60V
  • Current - Continuous Drain (Id) @ 25°C:20A
  • Rds On (Max) @ Id, Vgs:15.5mOhm @ 17A, 10V
  • Vgs(th) (Max) @ Id:4V @ 20µA
  • Gate Charge (Qg) (Max) @ Vgs:29nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds:2260pF @ 25V
  • Power - Max:50W
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:8-PowerVDFN
  • Supplier Device Package:PG-TDSON-8-4
  • Grade:Automotive
  • Qualification:AEC-Q101

FET, MOSFET Arrays datasheet and documents for IPG20N06S415ATMA1

IPG20N06S415ATMA1

FET, MOSFET Arrays Overview

The IPG20N06S4-15 is a dual N-channel enhancement mode power transistor from Infineon's OptiMOS-T2 family, designed for automotive applications. It features a PG-TDSON-8 package with a maximum drain-source voltage of 60 V and a continuous drain current of 20 A per channel at 25 °C. The device exhibits a maximum on-state resistance of 15.5 mΩ at VGS=10 V and supports pulsed currents up to 80 A. It operates within a temperature range of -55 °C to +175 °C and includes avalanche testing.

FET, MOSFET Arrays Feature Summary

  • Dual N-channel configuration in a compact surface-mount package
  • Qualified for automotive environments under AEC-Q101 standards
  • High thermal stability supporting operation up to 175 °C junction temperature
  • Robust performance validated through 100% avalanche testing

FET, MOSFET Arrays Applications

  • Automotive power switching circuits
  • Motor control systems
  • DC-DC converter topologies

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering suffix against official Infineon documentation to ensure correct packaging and tape-and-reel specifications. Confirm that the component meets the required AEC-Q101 qualification level for your target application. Cross-reference the datasheet revision date to ensure access to the latest electrical characteristics and thermal data before finalizing procurement orders.

FET, MOSFET Arrays Selection Notes

Select this component when a dual N-channel MOSFET with low on-resistance is required for 60 V automotive systems. Ensure the PCB layout accommodates the PG-TDSON-8 footprint and provides adequate copper area for thermal dissipation. Verify that the gate drive voltage aligns with the specified threshold and plateau voltages for optimal switching performance.

FET, MOSFET Arrays Part Context

This part belongs to the OptiMOS-T2 series, which utilizes advanced trench technology to minimize conduction losses. The dual configuration allows for efficient half-bridge or synchronous rectifier implementations within a single small form factor. It is engineered specifically to meet the rigorous reliability and environmental demands of modern automotive electronics.

FET, MOSFET Arrays Replacement Considerations

Check for direct substitutes within the same OptiMOS-T2 family offering similar RDS(on) and voltage ratings. Ensure any replacement maintains the PG-TDSON-8 pinout compatibility and meets the same AEC-Q101 qualification requirements.

IPG20N06S415ATMA1IPG20N06S415ATMA1

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