IPG20N06S4L14AATMA1

FET, MOSFET Arrays Overview

The IPG20N06S4L14AATMA1 is a dual N-channel enhancement mode MOSFET from the OptiMOS-T2 series, housed in a PG-TDSON-8 package. It features a drain-source voltage of 60 V and a continuous drain current of 20 A per channel at 25°C. The maximum on-state resistance is 13.7 mΩ at VGS=10V. Key electrical parameters include a gate threshold voltage range of 1.2 V to 2.2 V, total gate charge up to 39 nC, and a thermal resistance junction-to-case of 3 K/W. It supports an operating temperature range from -55°C to +175°C and is qualified under AEC-Q101 standards.

FET, MOSFET Arrays Feature Summary

• Dual N-channel configuration with logic-level enhancement mode operation
• Automotive grade qualification compliant with AEC-Q101 standards
• High thermal stability supporting operation up to 175°C junction temperature
• Robust avalanche performance verified through 100% single-pulse testing

FET, MOSFET Arrays Applications

• Automotive power distribution systems
• Motor control circuits requiring high current handling
• DC-DC converter topologies for vehicle electronics
• Load switching applications in automotive environments

FET, MOSFET Arrays Procurement Notes

Verify component authenticity by cross-referencing the manufacturer part number and marking code against official Infineon documentation. Confirm that the specific ordering suffix matches the required package and tape-and-reel specifications. Ensure compliance with RoHS directives and check for any recent revision history updates that may affect pinout or electrical characteristics before finalizing procurement orders.

FET, MOSFET Arrays Selection Notes

Select this component for designs requiring dual-channel isolation within a compact surface-mount footprint. The low on-resistance minimizes conduction losses in high-current paths. Consider the thermal resistance values when designing PCB copper areas for adequate heat dissipation. Verify that the gate drive voltage meets the minimum requirements for full enhancement given the specified threshold voltage ranges.

FET, MOSFET Arrays Part Context

This device belongs to the OptiMOS-T2 family of power transistors designed for automotive applications. It utilizes silicon technology to deliver high efficiency and reliability. The PG-TDSON-8 package provides enhanced thermal performance compared to standard SSO8 variants. The product is intended for use in harsh electromagnetic and thermal environments typical of modern vehicle architectures.

FET, MOSFET Arrays Replacement Considerations

Direct replacements include IPG20N06S4L-14 and IPG20N06S4L-14A. Verify package compatibility and electrical parameter tolerances before substitution. Ensure that any alternative component maintains the same AEC-Q101 qualification status and thermal resistance characteristics to preserve system reliability.

FET, MOSFET Arrays FAQ

What is the maximum pulsed drain current capability?

The maximum pulsed drain current is 80 A per channel when one channel is active.

Is the device suitable for high-temperature automotive environments?

Yes, the device is qualified for an operating junction temperature range up to 175°C and meets AEC-Q101 standards.

How does the on-state resistance vary with gate voltage?

The maximum on-state resistance is 20 mΩ at VGS=4.5V and decreases to a maximum of 13.7 mΩ at VGS=10V.