IPG20N06S4L26AATMA1

FET, MOSFET Arrays Overview

The IPG20N06S4L26AATMA1 is a dual N-channel OptiMOS-T2 power transistor in a PG-TDSON-8 package. It features a drain-source voltage of 60 V and a continuous drain current of 20 A per channel at 25°C. The maximum on-state resistance is 26 mΩ at VGS=10V. Total gate charge is 20 nC, with a thermal resistance junction-to-case of 4.5 K/W. It supports an operating temperature range from -55°C to +175°C and is qualified under AEC-Q101 standards.

FET, MOSFET Arrays Feature Summary

• Dual N-channel enhancement mode configuration within a single compact package
• Automotive-grade reliability certified by AEC-Q101 qualification standards
• High thermal stability supporting operation up to 175°C junction temperature
• Robust avalanche performance validated through 100% avalanche testing

FET, MOSFET Arrays Applications

• Automotive synchronous rectification circuits
• DC/DC converter topologies requiring dual channels
• Power management modules for automotive electronics

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering suffix matches the required tape-and-reel packaging format. Confirm that the component meets the necessary RoHS compliance requirements for your assembly process. Ensure the PG-TDSON-8 footprint aligns with your PCB design guidelines before finalizing procurement orders.

FET, MOSFET Arrays Selection Notes

Select this component when a dual-channel solution is required for 60V applications. The low on-resistance minimizes conduction losses in high-current paths. Consider the thermal resistance specifications for heat dissipation requirements in enclosed automotive environments.

FET, MOSFET Arrays Part Context

This device belongs to Infineon's OptiMOS-T2 family, designed for efficient power switching. It utilizes advanced trench technology to achieve low on-resistance and fast switching speeds. The dual configuration allows for space-saving designs in complex power systems.

FET, MOSFET Arrays Replacement Considerations

Check datasheets for alternative dual N-channel MOSFETs with similar 60V ratings and comparable RDS(on) values. Verify pin compatibility and thermal characteristics to ensure seamless integration without redesigning the PCB layout.

FET, MOSFET Arrays FAQ

What is the maximum pulsed drain current capability?

The device can handle a pulsed drain current of 80 A per channel.

Is the component suitable for high-temperature automotive environments?

Yes, it is AEC-Q101 qualified and supports an operating temperature range up to 175°C.

How does the gate threshold voltage vary with temperature?

The gate threshold voltage typically decreases as the junction temperature increases, ranging from 1.2 V to 2.2 V at 25°C.