IPG20N10S4L35ATMA1

FET, MOSFET Arrays Overview

The IPG20N10S4L-35 is a dual N-channel logic level enhancement mode power transistor from Infineon Technologies, utilizing OptiMOS-T2 technology. It features a PG-TDSON-8-4 package and is AEC-Q101 qualified for automotive applications. Key electrical parameters include a drain-source voltage of 100 V, continuous drain current of 20 A per channel at 25°C, and a maximum on-state resistance of 35 mΩ at VGS=10V. The device supports an operating temperature range of -55°C to +175°C with a thermal resistance junction-to-case of 3.5 K/W.

FET, MOSFET Arrays Feature Summary

• Dual N-channel configuration providing independent control within a single compact package.
• Logic-level gate drive capability allowing direct interface with standard digital logic signals.
• AEC-Q101 qualification ensuring reliability and robustness for demanding automotive environments.
• High avalanche energy rating validated through 100% testing for enhanced circuit protection.

FET, MOSFET Arrays Applications

• Automotive power distribution systems
• Motor control circuits
• DC-DC converter topologies

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering suffix against official Infineon documentation to confirm exact packaging and marking variations. Ensure component authenticity by sourcing from authorized distributors. Confirm that the requested part matches the required AEC-Q101 qualification status for your specific application environment.

FET, MOSFET Arrays Selection Notes

Select this component when a dual N-channel MOSFET with 100V rating and low RDS(on) is required in a small surface-mount footprint. Consider the 35 mΩ maximum resistance at VGS=10V for efficiency calculations. Verify that the 20A continuous current rating meets the thermal management capabilities of the target PCB layout.

FET, MOSFET Arrays Part Context

This device belongs to the OptiMOS-T2 family, designed for high-efficiency switching applications. It integrates advanced trench gate technology to minimize conduction losses while maintaining fast switching speeds. The dual configuration allows for bridge or half-bridge implementations without requiring separate discrete components.

FET, MOSFET Arrays Replacement Considerations

Consult official cross-reference lists for verified substitutes. Ensure replacement parts match the PG-TDSON-8-4 package dimensions and pinout configuration. Verify that alternative devices meet the same AEC-Q101 automotive qualification standards if used in regulated sectors.

FET, MOSFET Arrays FAQ

What is the maximum avalanche energy rating?

The single pulse avalanche energy (EAS) is rated at 60 mJ under conditions of ID=10A.

Is the device suitable for high-temperature automotive environments?

Yes, it is AEC-Q101 qualified and supports an operating junction temperature up to 175°C.

How does the on-state resistance vary with gate voltage?

RDS(on) is specified as a maximum of 45 mΩ at VGS=4.5V and 35 mΩ at VGS=10V.