Single FETs, MOSFETs IPI80N03S4L03AKSA1 product image

IPI80N03S4L03AKSA1

  • Description:MOSFET N-CH 30V 80A TO262-3
  • Series:OptiMOS™
  • Mfr:Infineon Technologies
  • Package:Tube

SKU:ec23299fd611 Category: Brand:

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IPI80N03S4L03AKSA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 30V 80A TO262-3. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for IPI80N03S4L03AKSA1

  • Description:MOSFET N-CH 30V 80A TO262-3
  • Series:OptiMOS™
  • Mfr:Infineon Technologies
  • Package:Tube
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):30 V
  • Current - Continuous Drain (Id) @ 25°C:80A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
  • Rds On (Max) @ Id, Vgs:2.7mOhm @ 80A, 10V
  • Vgs(th) (Max) @ Id:2.2V @ 90µA
  • Gate Charge (Qg) (Max) @ Vgs:140 nC @ 10 V
  • Vgs (Max):±16V
  • Input Capacitance (Ciss) (Max) @ Vds:9750 pF @ 25 V
  • FET Feature:-
  • Power Dissipation (Max):136W (Tc)
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Grade:Automotive
  • Qualification:AEC-Q101
  • Mounting Type:Through Hole
  • Supplier Device Package:PG-TO262-3
  • Package / Case:TO-262-3 Long Leads, I2PAK, TO-262AA

Single FETs, MOSFETs datasheet and documents for IPI80N03S4L03AKSA1

IPI80N03S4L03AKSA1

Single FETs, MOSFETs Overview

The IPI80N03S4L-03 is an N-channel enhancement mode power transistor from the OptiMOS-T2 series, housed in a PG-TO262-3-1 (I2PAK) leaded package. It features a maximum drain-source voltage of 30 V and a continuous drain current of 80 A at 25°C case temperature. The device exhibits a maximum on-state resistance of 2.4 mΩ at VGS=10V and ID=80A. It supports a pulsed drain current of 320 A and operates within a junction temperature range of -55°C to +175°C. Thermal resistance from junction to case is 1.1 K/W.

Single FETs, MOSFETs Feature Summary

  • Automotive AEC-Q101 qualified for high reliability applications
  • Ultra-low RDS(on) optimized for high efficiency power switching
  • 100% avalanche tested ensuring robustness against transient energy events
  • Green product compliant with RoHS standards

Single FETs, MOSFETs Applications

  • Automotive power distribution systems
  • DC-DC converter circuits
  • Motor control applications

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix AKSA1 against official Infineon documentation to confirm packaging details and marking codes. Ensure the component meets the required automotive qualification standards for your specific application environment. Cross-reference the datasheet revision date with your manufacturing timeline to account for potential updates in thermal or electrical characteristics.

Single FETs, MOSFETs Selection Notes

Select this component when a low-voltage, high-current N-channel MOSFET is required for automotive-grade environments. The PG-TO262-3-1 package offers a balance between thermal performance and through-hole mounting convenience. Consider the 30V rating and 80A current capability relative to your system's peak load requirements and thermal management constraints.

Single FETs, MOSFETs Part Context

This part belongs to the OptiMOS-T2 family, designed for automotive and industrial applications requiring high reliability. It shares core technology with the IPB80N03S4L-02 and IPP80N03S4L-03, differing primarily in the package type. The I2PAK variant provides a robust solution for applications where surface-mount packages are not suitable.

Single FETs, MOSFETs Replacement Considerations

Direct replacements include IPB80N03S4L-02 (D2PAK) and IPP80N03S4L-03 (TO-220). Verify pinout compatibility and thermal resistance differences when substituting these variants. Ensure the replacement maintains the same automotive qualification level if used in certified systems.

Single FETs, MOSFETs FAQ

Is the IPI80N03S4L-03 suitable for high-temperature automotive environments?

Yes, it is AEC-Q101 qualified and supports an operating junction temperature up to 175°C.

What is the maximum single-pulse avalanche energy the device can handle?

The device can withstand a single-pulse avalanche energy of 260 mJ at a drain current of 80 A.

IPI80N03S4L03AKSA1IPI80N03S4L03AKSA1

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