IPI90R1K2C3XKSA2

Single FETs, MOSFETs Overview

The IPI90R1K2C3 is a CoolMOS™ Power Transistor manufactured by Infineon Technologies, housed in a PG-TO262 package. It features an N-channel enhancement mode configuration with a drain-source breakdown voltage of 900 V and a continuous drain current of 5.1 A at Tc=25 °C. The maximum on-state resistance is 1.2 Ω at 25 °C, supported by a typical gate charge of 28 nC. The device operates within a temperature range of -55 °C to +150 °C and dissipates up to 83 W.

Single FETs, MOSFETs Feature Summary

• Lowest figure-of-merit R_ON x Q_g
• Extreme dv/dt rated
• High peak current capability
• Ultra low gate charge

Single FETs, MOSFETs Applications

• Quasi Resonant Flyback topologies
• Forward converter topologies
• PC Silverbox applications
• Consumer electronics power supplies
• Industrial SMPS

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix against official Infineon documentation to confirm exact packaging and marking details. Confirm RoHS compliance status and lead plating specifications directly from the manufacturer's datasheet before procurement. Ensure the component meets JEDEC qualification requirements for the intended target application environment.

Single FETs, MOSFETs Selection Notes

Select this component for high-voltage switching applications requiring low gate charge and rugged avalanche performance. Evaluate thermal management requirements based on the junction-to-case thermal resistance of 1.5 K/W. Consider the extreme dv/dt rating when designing circuits susceptible to fast transient voltages or high-frequency switching operations.

Single FETs, MOSFETs Part Context

This part belongs to the CoolMOS™ 900V product family designed for efficient power conversion. It utilizes silicon technology optimized for low conduction and switching losses. The PG-TO262 surface-mount package facilitates integration into compact printed circuit board designs while maintaining robust thermal dissipation capabilities for industrial and consumer environments.

Single FETs, MOSFETs Replacement Considerations

Consult official cross-reference tools for verified substitutes. Ensure replacement parts match the 900 V rating, TO-262 package dimensions, and electrical characteristics such as R_DS(on) and Q_g. Verify that any alternative component maintains equivalent avalanche energy ratings and thermal resistance values.

Single FETs, MOSFETs FAQ

What is the maximum repetitive avalanche energy rating?

The single pulse avalanche energy (E_AS) is rated at 68 mJ under conditions of I_D=0.92 A and V_DD=50 V.

Is the device qualified for specific industry standards?

Yes, the component is qualified according to JEDEC standards for target applications.