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The IPP319N20NM6AKSA1 is an N-channel power MOSFET manufactured by Infineon Technologies, designed for high-efficiency switching applications. It features a 200 V drain-source voltage rating and a continuous drain current of 31 A at 25°C. The device exhibits a maximum on-resistance of 31.9 mΩ, contributing to low conduction losses. Packaged in a TO-220-3 through-hole format, it supports a junction temperature range from -55°C to +175°C with a power dissipation capacity of 125 W. Key electrical characteristics include a gate charge of 15.9 nC and a threshold voltage typically around 4.5 V.
Verify the exact part number against official Infineon documentation to ensure compatibility with design requirements. Confirm package type and pinout alignment before integration. Check for any specific handling or storage guidelines provided in the datasheet to maintain component integrity during assembly processes.
Select this component when a 200V N-channel MOSFET with moderate current handling is required. Compare the 31.9 mΩ on-resistance against system loss budgets. Ensure the TO-220-3 package fits the thermal and mechanical constraints of the target application environment.
This part belongs to Infineon's IP-Power series, focusing on cost-effective solutions for general-purpose power switching. It complements other devices in the 200V class, offering a balance between performance and manufacturability for mass-market electronic equipment.
Check for direct cross-references within Infineon's portfolio. Verify pin compatibility and electrical parameters if substituting with similar TO-220-3 MOSFETs from other manufacturers. Ensure thermal resistance values match the existing heatsink design.