IPW60R024CM8XKSA1

$9.56

Description：IPW60R024CM8XKSA1
Series：CoolMOS™
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:182c68509275 Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

IPW60R024CM8XKSA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is IPW60R024CM8XKSA1. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for IPW60R024CM8XKSA1

Description：IPW60R024CM8XKSA1
Series：CoolMOS™
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：600 V
Current - Continuous Drain (Id) @ 25°C：91A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：24mOhm @ 41.7A, 10V
Vgs(th) (Max) @ Id：4.7V @ 1.06mA
Gate Charge (Qg) (Max) @ Vgs：122 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：5382 pF @ 400 V
FET Feature：-
Power Dissipation (Max)：431W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：PG-TO247-3-U06
Package / Case：TO-247-3

Single FETs, MOSFETs datasheet and documents for IPW60R024CM8XKSA1

IPW60R024CM8XKSA1

Single FETs, MOSFETs Overview

The IPW60R024CM8XKSA1 is a 600V CoolMOS CM8 N-Channel Power Transistor built on Infineon's super-junction platform. It features an integrated fast body diode and XT interconnection technology for superior thermal performance. Key parameters include a drain-source breakdown voltage of 650V, a maximum on-state resistance of 24 mΩ, and a typical gate charge of 122 nC. The device supports a pulsed drain current of 359A and operates within a junction temperature range of -55°C to 175°C.

Single FETs, MOSFETs Feature Summary

Built on Infineon’s world-class super-junction MOSFET platform with an integrated fast body diode.
Features .XT interconnection technology for best-in-class thermal performance.
Fully qualified according to JEDEC standards for industrial applications.
Provides outstanding commutation ruggedness suitable for broad hard and soft switching applications.

Single FETs, MOSFETs Applications

Datacenter and AI server power supplies
Micro and residential hybrid inverters
Portable and residential energy storage systems
EV charging and light electric vehicles

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering code suffix against official documentation to ensure correct package and qualification variants. Confirm that the component meets all necessary JEDEC industrial application requirements for your specific design environment. Cross-reference datasheet revision history for any updates regarding thermal resistance or safe operating area scaling before finalizing procurement specifications.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring high power density and low system cost in 600V applications. Consider the 24 mΩ on-state resistance and 122 nC gate charge for optimizing switching losses and drive requirements. Evaluate the thermal characteristics and PG-TO247-3 package suitability for your heat dissipation strategy and mounting constraints.

Single FETs, MOSFETs Part Context

This transistor belongs to the CoolMOS CM8 family, serving as the successor to the 600V CoolMOS 7 MOSFET family. It enhances Infineon's portfolio by offering improved price-performance ratios and reliability. The device is designed to enable multiple topologies while maintaining ease of use and shorter design cycles for power electronics engineers.