IQE013N04LM6CGATMA1

Single FETs, MOSFETs Overview

The IQE013N04LM6CGATMA1 is an OptiMOS 6 N-channel power MOSFET featuring a 40 V drain-source voltage rating and a 31 A continuous drain current capability. It utilizes a WHTFN-9 (PQFN 3.3x3.3) source-down center-gate package to achieve a maximum on-resistance of 1.35 mΩ at 10 V gate drive. The device supports logic-level operation with a threshold voltage range of 1.2 V to 2 V and exhibits low gate charge characteristics, including 41 nC at 10 V. It operates within a temperature range of -55 °C to +175 °C junction temperature.

Single FETs, MOSFETs Feature Summary

• OptiMOS 6 technology provides optimized performance for low-voltage switching applications.
• Center-gate architecture combined with dual-side cooling enhances thermal dissipation capabilities.
• Source-down package design facilitates efficient heat transfer from the die to the PCB.

Single FETs, MOSFETs Applications

• High-efficiency DC-DC converters
• Synchronous rectification circuits
• Industrial motor control systems

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix against official Infineon documentation to ensure correct packaging and tape-and-reel specifications. Confirm that the component matches the required PQFN 3.3x3.3 footprint and pinout configuration for your PCB layout. Cross-reference the datasheet version to validate electrical parameters before finalizing procurement orders.

Single FETs, MOSFETs Selection Notes

Select this component when a compact surface-mount solution is required for 40 V applications. The low on-resistance minimizes conduction losses in high-current scenarios. Ensure the driving circuit can support the specified gate threshold voltage range for reliable enhancement-mode switching.

Single FETs, MOSFETs Part Context

This part belongs to the OptiMOS 6 family of low-voltage power MOSFETs manufactured by Infineon Technologies. It represents an advancement in silicon performance, offering improved figure-of-merit compared to previous generations while maintaining compatibility with standard surface-mount assembly processes.

Single FETs, MOSFETs Replacement Considerations

Check for direct substitutes such as IQE013N04LM6ATMA1 or IQE013N04LM6CGSC if availability is constrained. Verify that any alternative maintains identical pinout, thermal resistance, and electrical ratings to ensure seamless integration without redesigning the host circuit board.