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IQE018N06NM6SCATMA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is TRENCH 40. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for IQE018N06NM6SCATMA1
- Description：TRENCH 40<-<100V
- Series：-
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR)
- FET Type：-
- Technology：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-
- Grade：-
- Qualification：-
- Mounting Type：-
- Supplier Device Package：-
- Package / Case：-
Single FETs, MOSFETs datasheet and documents for IQE018N06NM6SCATMA1
Single FETs, MOSFETs Overview
The IQE018N06NM6SCATMA1 is an N-Channel OptiMOS 6 power MOSFET manufactured by Infineon Technologies. It features a PG-TSON-8 surface-mount package and utilizes silicon technology. Key electrical parameters include a drain-source voltage (Vds) of 60 V, a continuous drain current (Id) of 178 mA, and a maximum on-resistance (Rds(on)) of 2.2 mOhms at 10 V gate drive. The device operates with a gate-source voltage range of -20 V to +20 V and has a typical gate charge (Qg) of 56 nC. It supports an enhancement mode operation with a threshold voltage (Vgs(th)) of 3.3 V. Thermal performance includes a power dissipation (Pd) of 125 mW and an operating temperature range from -55 °C to +175 °C.
Single FETs, MOSFETs Feature Summary
- OptiMOS 6 technology provides low on-state resistance for high efficiency.
- PG-TSON-8 package enables compact surface-mount design.
- High thermal stability supports operation up to 175 °C junction temperature.
Single FETs, MOSFETs Applications
- Low-power DC-DC converter circuits
- Load switching applications
- Battery protection modules
Single FETs, MOSFETs Procurement Notes
Verify the complete ordering part number IQE018N06NM6SCATMA1 against official Infineon documentation to ensure correct suffix identification. Confirm that the PG-TSON-8 package type matches your PCB footprint requirements. Check RoHS compliance status in the latest datasheet before finalizing procurement specifications.
Single FETs, MOSFETs Selection Notes
Select this component when a 60 V N-Channel MOSFET with minimal footprint is required. The 2.2 mOhm Rds(on) suits low-voltage, moderate-current applications. Ensure the 178 mA continuous current rating meets the specific load demands of the target circuit design.
Single FETs, MOSFETs Part Context
This device belongs to the OptiMOS 6 family of power transistors designed for efficient power management. It represents Infineon's silicon-based solution for compact power switching needs. The product integrates advanced cell technology within a small outline package to maximize power density.
Single FETs, MOSFETs Replacement Considerations
Cross-reference with other OptiMOS 6 devices in the PG-TSON-8 package having similar 60 V ratings. Verify pinout compatibility and thermal characteristics before substituting with alternative manufacturers' parts.
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