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The IQFH68N06NM5ATMA1 is an N-channel Power MOSFET from Infineon Technologies, belonging to the OptiMOS 5 product family. It features a 60 V drain-source voltage rating and utilizes silicon technology in a TSON-12 surface-mount package. Key electrical parameters include a maximum continuous drain current of 339 A at 25°C, a typical on-resistance of 1.72 mΩ at 10 V gate drive, and a total gate charge of 115 nC. The device supports a wide operating temperature range from -55°C to +175°C with a power dissipation capacity of 214 W.
Verify the specific ordering suffix ATMA1 to confirm reel packaging configuration. Ensure compatibility with standard SMD/SMT assembly processes for the TSON-12 footprint. Cross-reference the manufacturer part number against official Infineon documentation to validate RoHS compliance status before finalizing procurement orders.
Select this component when a 60 V rating and low RDS(on) are required in a small form factor. The 1.72 mΩ resistance suits high-current applications up to 339 A. Consider the TSON-12 package constraints for PCB layout and thermal management requirements compared to larger packages like PQFN or TO-263.
This part belongs to the OptiMOS 5 series, designed for industrial and consumer applications requiring high power density. It shares the 60 V platform architecture with other models like IQD009N06NM5SC but differs in package type and specific electrical characteristics tailored for surface-mount integration.
Direct substitutes within the same family include IQFH99N06NM5ATMA1, which offers similar specifications in the same TSON-12 package. Designers should verify pinout compatibility and thermal performance metrics when considering alternative packages such as PQFN 5x6 Source-Down variants.