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The IQFH86N06NM5ATMA1 is an N-channel OptiMOS 5 power transistor manufactured by Infineon Technologies. It features a 60 V drain-source voltage rating and a continuous drain current of 327 A. The device exhibits a maximum on-resistance of 1.9 mOhms at 10 V gate drive. Key electrical parameters include a gate charge of 114 nC, a threshold voltage of 2.8 V, and a power dissipation capacity of 214 W. It operates within a temperature range of -55 °C to +175 °C and utilizes a TSON-12 surface-mount package.
Verify the specific ordering suffix against official Infineon documentation to confirm exact packaging and reel specifications. Ensure component authenticity through authorized distribution channels. Cross-reference the datasheet revision date with manufacturing lot codes to validate technical compliance before integration into production schedules.
Select this component when a 60 V N-channel MOSFET with low Rds(on) in a TSON-12 package is required. Compare gate charge and total power dissipation against system thermal constraints. Ensure the driving circuit can support the specified threshold voltage and gate drive requirements for optimal switching performance.
This part belongs to the OptiMOS 5 family of silicon power MOSFETs designed for general-purpose power switching applications. The series emphasizes low figure-of-merit values to improve overall system efficiency. It complements other Infineon packages like HSOG-8 and HDSOP-16 by offering a distinct footprint optimized for specific layout constraints.
Direct substitutes are not explicitly listed in public documentation. Evaluate alternatives based on matching Vds, Id, Rds(on), and package dimensions. Verify that any replacement maintains compatible gate charge characteristics and thermal resistance values to ensure circuit stability.