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The IQFH99N06NM5ATMA1 is a single N-channel Power MOSFET from Infineon Technologies, utilizing OptiMOS 5 technology. It features a 60 V drain-source voltage rating and a continuous drain current of 339 A. The device exhibits a maximum on-resistance of 1.72 mΩ at 10 V gate drive. It operates within a temperature range of -55 °C to +175 °C with a power dissipation capacity of 214 W. The component is housed in a TSON-12 surface-mount package.
Verify the specific ordering suffix against official Infineon documentation to confirm exact packaging and reel specifications. Ensure that the requested part number matches the required tape-and-reel quantity or cut-tape availability. Cross-reference the manufacturer's datasheet revision history to validate the technical parameters before finalizing procurement orders.
Select this component when a low-voltage, high-current solution is required in a compact surface-mount footprint. The TSON-12 package provides enhanced thermal performance compared to standard small outlines. Consider the 60 V rating and 339 A current capability relative to the specific circuit load requirements and thermal management constraints.
This model belongs to the OptiMOS 5 family, representing Infineon's silicon-based power transistor generation. The series focuses on reducing on-resistance while maintaining robust switching characteristics. The IQFH prefix indicates specific internal product line coding within the broader OptiMOS portfolio.
Consult official Infineon cross-reference tools for verified alternatives. Direct replacements must match the 60 V rating, N-channel configuration, and TSON-12 package dimensions. Verify pinout compatibility and thermal resistance values before substituting.