IQFH99N06NM5ATMA1

IQFH99N06NM5ATMA1

$2.00
  • Description:TRENCH 40<-<100V
  • Series:-

SKU:66e02da76ba7 Category: Brand:

  
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Product Detailed Parameters

  • Description:TRENCH 40<-<100V
  • Series:-
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR)
  • IGBT Type:-
  • Voltage - Collector Emitter Breakdown (Max):-
  • Current - Collector (Ic) (Max):-
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  • Vce(on) (Max) @ Vge, Ic:-
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  • Input Type:-
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  • Td (on/off) @ 25°C:-
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  • Reverse Recovery Time (trr):-
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  • Package / Case:-
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IQFH99N06NM5ATMA1

Overview

The IQFH99N06NM5ATMA1 is a single N-channel Power MOSFET from Infineon Technologies, utilizing OptiMOS 5 technology. It features a 60 V drain-source voltage rating and a continuous drain current of 339 A. The device exhibits a maximum on-resistance of 1.72 mΩ at 10 V gate drive. It operates within a temperature range of -55 °C to +175 °C with a power dissipation capacity of 214 W. The component is housed in a TSON-12 surface-mount package.

Feature Summary

  • OptiMOS 5 technology integration for optimized switching performance
  • High thermal stability supporting operation up to 175 °C junction temperature
  • Low on-resistance design for efficient power conduction

Applications

  • Synchronous rectification in DC-DC converters
  • Motor control systems
  • Load switching applications

Procurement Notes

Verify the specific ordering suffix against official Infineon documentation to confirm exact packaging and reel specifications. Ensure that the requested part number matches the required tape-and-reel quantity or cut-tape availability. Cross-reference the manufacturer's datasheet revision history to validate the technical parameters before finalizing procurement orders.

Selection Notes

Select this component when a low-voltage, high-current solution is required in a compact surface-mount footprint. The TSON-12 package provides enhanced thermal performance compared to standard small outlines. Consider the 60 V rating and 339 A current capability relative to the specific circuit load requirements and thermal management constraints.

Part Context

This model belongs to the OptiMOS 5 family, representing Infineon's silicon-based power transistor generation. The series focuses on reducing on-resistance while maintaining robust switching characteristics. The IQFH prefix indicates specific internal product line coding within the broader OptiMOS portfolio.

Replacement Considerations

Consult official Infineon cross-reference tools for verified alternatives. Direct replacements must match the 60 V rating, N-channel configuration, and TSON-12 package dimensions. Verify pinout compatibility and thermal resistance values before substituting.

IQFH99N06NM5ATMA1IQFH99N06NM5ATMA1
$2.00
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