IRF1010ZPBF

Single FETs, MOSFETs Overview

The IRF1010ZPBF is a HEXFET Power MOSFET in the TO-262 (D2PAK) package. It features a 55V drain-source breakdown voltage and an ultra-low on-resistance of 7.5mΩ at VGS=10V. The device supports a continuous drain current of 75A at 25°C case temperature, with a maximum power dissipation of 140W. Key electrical parameters include a gate threshold voltage range of 2.0V to 4.0V, total gate charge of 63nC typ., and fast switching characteristics with turn-on delay of 18ns and fall time of 92ns. It operates within a junction temperature range of -55°C to +175°C.

Single FETs, MOSFETs Feature Summary

• Utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area.
• Supports repetitive avalanche operation up to the maximum junction temperature limit.
• Designed for high efficiency and reliability with fast switching speeds.
• Features a lead-free construction compliant with industrial standards.

Single FETs, MOSFETs Applications

• High-efficiency DC-DC converters
• Motor control circuits
• Power supply output stages

Single FETs, MOSFETs Procurement Notes

Verify the component marking matches the official datasheet specifications for the TO-262 package. Confirm that the part number suffix indicates lead-free assembly. Ensure the supplier provides traceability documentation consistent with Infineon Technologies manufacturing records before finalizing acquisition.

Single FETs, MOSFETs Selection Notes

Select this component when a 55V N-channel MOSFET with low conduction losses is required. The 7.5mΩ RDS(on) minimizes thermal generation during high-current operations. Verify that the application's peak current does not exceed the 75A continuous or 360A pulsed ratings under the specific thermal management conditions provided.

Single FETs, MOSFETs Part Context

This device belongs to the HEXFET family of power MOSFETs from Infineon Technologies. It is specifically packaged in the TO-262 form factor, distinguishing it from other variants like the TO-220AB or DPAK packages available within the same electrical specification series.

Single FETs, MOSFETs Replacement Considerations

Direct substitutes include IRF1010ZSPBF and IRF1010ZLPBF, which share identical electrical characteristics but utilize different package types.

Single FETs, MOSFETs FAQ

Is repetitive avalanche operation permitted for this device?

Yes, the datasheet explicitly states that repetitive avalanche operation is allowed up to the maximum junction temperature (Tjmax).

What is the internal source inductance value?

The internal source inductance is typically 7.5 nH, measured between the package lead and the center of the die contact.