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IRF1104L is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 40V 100A TO262. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for IRF1104L
- Description：MOSFET N-CH 40V 100A TO262
- Series：HEXFET®
- Mfr：Infineon Technologies
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：40 V
- Current - Continuous Drain (Id) @ 25°C：100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：9mOhm @ 60A, 10V
- Vgs(th) (Max) @ Id：4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：93 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：2900 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：2.4W (Ta), 170W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-262
- Package / Case：TO-262-3 Long Leads, I2PAK, TO-262AA
Single FETs, MOSFETs datasheet and documents for IRF1104L
Single FETs, MOSFETs Overview
The IRF1104L is a discontinued N-channel power MOSFET from Infineon Technologies, part of the HEXFET series. It features a 40V drain-source voltage rating and a continuous drain current of 100A at case temperature. The device utilizes a TO-262 through-hole package with a maximum on-resistance of 9 milliohms at 10V gate drive. Key electrical parameters include a gate charge of 93 nC and an input capacitance of 2900 pF. Power dissipation reaches 170W at case temperature, supporting operation across a junction temperature range of -55°C to 175°C.
Single FETs, MOSFETs Feature Summary
- N-channel enhancement mode construction for standard switching applications
- Through-hole TO-262 packaging designed for robust mechanical mounting
- HEXFET technology providing optimized low on-resistance characteristics
Single FETs, MOSFETs Applications
- General purpose power switching circuits
- DC-DC converter implementations
- Motor control driver stages
Single FETs, MOSFETs Procurement Notes
Verify component authenticity carefully as this item is officially discontinued. Confirm manufacturing date codes against project timelines due to potential supply chain limitations. Ensure replacement strategies are in place if long-term availability is required for new designs. Cross-reference datasheet revisions to match specific lot requirements.
Single FETs, MOSFETs Selection Notes
Select this component only when legacy compatibility or specific through-hole form factors are mandatory. Evaluate thermal management capabilities given the 170W case dissipation limit. Compare against modern surface-mount alternatives for improved efficiency and space utilization in new product developments.
Single FETs, MOSFETs Part Context
This device belongs to Infineon's established HEXFET portfolio, representing earlier generations of planar MOSFET technology. It serves as a predecessor to newer OptiMOS and StrongIRFET lines, offering reliable performance for industrial applications where high current density in traditional packages remains necessary.
Single FETs, MOSFETs Replacement Considerations
Consider the IRF1104 for similar pin-compatible needs, though it also carries discontinuation status. For active alternatives, evaluate the IRF1404Z which offers higher current ratings in comparable packages.
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