Single FETs, MOSFETs IRF3704L product image

IRF3704L

$1.62
  • Description:MOSFET N-CH 20V 77A TO262
  • Series:HEXFET®
  • Mfr:Infineon Technologies
  • Package:Tube

SKU:224d4bcac786 Category: Brand:

  
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IRF3704L is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 20V 77A TO262. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for IRF3704L

  • Description:MOSFET N-CH 20V 77A TO262
  • Series:HEXFET®
  • Mfr:Infineon Technologies
  • Package:Tube
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):20 V
  • Current - Continuous Drain (Id) @ 25°C:77A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
  • Rds On (Max) @ Id, Vgs:9mOhm @ 15A, 10V
  • Vgs(th) (Max) @ Id:3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:19 nC @ 4.5 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:1996 pF @ 10 V
  • FET Feature:-
  • Power Dissipation (Max):87W (Tc)
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Through Hole
  • Supplier Device Package:TO-262
  • Package / Case:TO-262-3 Long Leads, I2PAK, TO-262AA

Single FETs, MOSFETs datasheet and documents for IRF3704L

IRF3704L

Single FETs, MOSFETs Overview

The IRF3704L is a single N-channel power MOSFET from the HEXFET series, manufactured by Infineon Technologies. It features a 20V drain-source voltage rating and a maximum on-resistance of 9 mΩ at 10V gate drive. The device supports a continuous drain current of 64A at 25°C case temperature. It utilizes TO-262 (I2Pak) through-hole packaging with long leads. Key electrical characteristics include a gate charge of 19 nC and a thermal resistance junction-to-case of 1.8 K/W. The component operates within a junction temperature range of -55°C to 175°C.

Single FETs, MOSFETs Feature Summary

  • Low on-resistance optimized for high-efficiency switching applications
  • Ultra-low gate impedance enabling fast switching speeds
  • Robust avalanche energy capability for inductive load handling

Single FETs, MOSFETs Applications

  • High frequency synchronous buck converters for computer processor power
  • DC-DC converter circuits requiring low voltage drop
  • Power management modules in computing hardware

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix designation against official Infineon documentation to confirm package type and lead-free status. Confirm RoHS compliance requirements as historical data indicates potential variations. Ensure the obsolete status is accounted for in long-term supply chain planning. Cross-reference datasheet revision numbers to validate parameter accuracy before integration into new designs.

Single FETs, MOSFETs Selection Notes

Select this component for applications demanding low voltage operation and high current capacity in through-hole configurations. Compare gate charge specifications against driver capabilities to ensure adequate switching performance. Evaluate thermal management requirements based on the specified junction-to-case resistance. Consider alternative surface-mount variants if PCB space constraints preclude the use of the TO-262 package.

Single FETs, MOSFETs Part Context

This part belongs to the HEXFET family of power MOSFETs, known for combining low RDS(on) with fast switching characteristics. The IRF3704L specifically targets low-voltage, high-current applications where efficiency is critical. It represents an older generation of Trench technology components designed for robust performance in industrial and computing power supplies.

Single FETs, MOSFETs Replacement Considerations

Consult official replacement guides for direct equivalents. Verify pinout compatibility and thermal characteristics when substituting.

IRF3704LIRF3704L
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