IRF3711

Single FETs, MOSFETs Overview

The IRF3711 is a single N-channel HEXFET power MOSFET manufactured by Infineon Technologies. It features a maximum drain-source voltage of 20 V and a continuous drain current of 110 A at 25°C case temperature, or 69 A at 100°C. The device exhibits a maximum on-resistance of 6 mΩ at 10V gate drive and 8.5 mΩ at 4.5V. Total gate charge is typically 29 nC with a Miller charge of 8.9 nC. Thermal resistance from junction to case is 1.04 K/W, supporting a maximum power dissipation of 120 W at 25°C. The component operates within a junction temperature range of -55°C to +150°C.

Single FETs, MOSFETs Feature Summary

• Ultra-low gate impedance for efficient switching performance
• Very low RDS(on) characteristics at both 10V and 4.5V gate voltages
• Fully characterized avalanche voltage and current capabilities
• Optimized for synchronous buck converters including capacitive induced turn-on immunity

Single FETs, MOSFETs Applications

• High frequency isolated DC-DC converters with synchronous rectification for telecom and industrial use
• High frequency buck converters for server processor power synchronous FETs
• Synchronous buck converters requiring optimized capacitive induced turn-on immunity

Single FETs, MOSFETs Procurement Notes

Verify the specific package variant required, as the IRF3711 family includes TO-220AB (IRF3711PbF), D2PAK (IRF3711SPbF), and TO-262 (IRF3711LPbF). Confirm lead-free status via the 'P' designation in the ordering suffix. Ensure the selected part matches the thermal management requirements for the intended application, considering the distinct thermal resistances associated with each package type.

Single FETs, MOSFETs Selection Notes

Select this component for applications demanding high current handling at low voltage levels. The low gate charge supports high-frequency operation, while the robust avalanche rating provides resilience against inductive load transients. Evaluate the thermal design carefully, as the continuous current capability is significantly limited by case temperature constraints rather than absolute maximum ratings alone.

Single FETs, MOSFETs Part Context

This component belongs to the HEXFET power MOSFET portfolio, designed for general-purpose switching applications. It represents a standard industry offering for low-voltage, high-current power stages. The technology focuses on minimizing conduction losses while maintaining reliable switching performance across a wide operating temperature range suitable for industrial environments.

Single FETs, MOSFETs Replacement Considerations

Cross-reference tools are available for identifying compatible substitutes within the same voltage and current class. Verify that any replacement maintains equivalent RDS(on), gate charge, and thermal resistance specifications to ensure circuit compatibility without redesigning the driver or heatsink infrastructure.

Single FETs, MOSFETs FAQ

What is the maximum pulsed drain current for the IRF3711?

The maximum pulsed drain current (IDM) is rated at 440 A.

Does the IRF3711 support unclamped inductive switching?

Yes, the device is fully characterized for avalanche energy, with a maximum single pulse avalanche energy of 460 mJ and an avalanche current of 30 A.

How does the on-resistance vary with gate voltage?

The maximum RDS(on) is 6 mΩ when driven at 10V and increases to 8.5 mΩ when driven at 4.5V.