IRF530NSPBF

Single FETs, MOSFETs Overview

The IRF530NSPbF is a single N-channel HEXFET power MOSFET manufactured by Infineon Technologies, housed in a D2PAK (TO-263) surface-mount package. It features a drain-to-source breakdown voltage of 100 V and an ultra-low on-resistance of 90 mΩ at a gate-to-source voltage of 10 V. The device supports a continuous drain current of 17 A at a case temperature of 25°C and can handle a pulsed drain current up to 60 A. It operates within a junction temperature range of -55°C to +175°C, with a maximum power dissipation of 3.8 W in free air and 70 W when mounted to a case. Thermal resistance from junction to case is rated at a maximum of 2.15 K/W.

Single FETs, MOSFETs Feature Summary

• Utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area for high efficiency.
• Features a ruggedized device design known for fast switching speeds and dynamic dv/dt rating.
• Fully avalanche rated with specified repetitive and single-pulse avalanche energy capabilities.
• Lead-free product compliant with environmental standards.

Single FETs, MOSFETs Applications

• High current applications requiring low internal connection resistance.
• Industrial market applications designed for robust performance.
• Surface mount power packages accommodating die sizes up to HEX-4.

Single FETs, MOSFETs Procurement Notes

Verify the component authenticity by checking the marking information against the datasheet specifications. Confirm that the part designation includes the PbF suffix to ensure lead-free compliance. Ensure the ordering suffix matches the required D2PAK packaging format. Cross-reference the lot code and date code with manufacturer records if necessary. Validate that the device meets the industrial market qualification standards defined by Infineon Technologies.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring a 100 V N-channel MOSFET in a surface-mount configuration. Consider the thermal management requirements given the 90 mΩ on-resistance and available power dissipation limits. Evaluate the gate charge characteristics for switching speed needs. Ensure the application stays within the safe operating area curves provided in the datasheet. Verify compatibility with the intended PCB footprint for the D2PAK package.

Single FETs, MOSFETs Part Context

This device belongs to the HEXFET family of power MOSFETs from International Rectifier, now part of Infineon Technologies. The HEXFET technology is characterized by its ability to deliver low on-resistance combined with fast switching capabilities. The IRF530N series is available in multiple packages, including through-hole versions like the TO-220AB and other surface-mount options. This specific variant utilizes the D2PAK form factor.

Single FETs, MOSFETs Replacement Considerations

Consult official cross-reference tools or distributor databases for verified substitute part numbers. Ensure any replacement maintains equivalent voltage, current, and thermal ratings. Verify package compatibility and pinout alignment before integration.