IRF5850

FET, MOSFET Arrays Overview

The IRF5850 is a dual P-channel HEXFET power MOSFET from Infineon Technologies, housed in a TSOP-6 surface-mount package. It integrates two independent dies within a single compact footprint to optimize board space while maintaining high current handling capabilities. The device features an ultra-low on-resistance of 0.135 Ω at VGS = -4.5V and supports a continuous drain current of -2.2 A at 25°C. With a maximum drain-source voltage of -20 V and a junction temperature range of -55°C to +150°C, it is designed for efficient battery and load management applications.

FET, MOSFET Arrays Feature Summary

• Dual P-channel configuration providing two independent switches in a single TSOP-6 package
• Ultra-low on-resistance achieved through advanced planar processing techniques
• Low gate charge characteristics enabling fast switching performance
• Surface-mount design optimized for applications with limited printed circuit board space

FET, MOSFET Arrays Applications

• Battery management systems
• Load management circuits
• Power switch applications requiring compact form factors

FET, MOSFET Arrays Procurement Notes

Verify the manufacturer designation as International Rectifier or Infineon Technologies depending on production date. Confirm the package type is TSOP-6 and ensure the component meets RoHS compliance requirements if applicable to the specific manufacturing batch. Cross-reference datasheet revision PD-93947A for accurate electrical specifications.

FET, MOSFET Arrays Selection Notes

Select this component when dual P-channel switching functionality is required in a minimal footprint. The low on-resistance makes it suitable for efficiency-critical designs. Ensure the operating voltage does not exceed -20 V and that thermal management accounts for the junction-to-ambient resistance of 130 °C/W in free air conditions.

FET, MOSFET Arrays Part Context

This component belongs to the HEXFET family of power MOSFETs developed by International Rectifier, now part of Infineon Technologies. The series utilizes advanced processing to minimize silicon area per ohm of resistance. The TSOP-6 package allows designers to replace two separate SOT-23 packages with a single dual-device solution, simplifying assembly and reducing overall board size.

FET, MOSFET Arrays Replacement Considerations

Datasheet references indicate the IRF5851 (code 3D), IRF5852 (code 3E), and IRF5805 (code I) are related parts within the same marking code reference list. Verify pinout compatibility and specific electrical parameters before substituting.