IRF5852TRPBF

FET, MOSFET Arrays Overview

The IRF5852TRPBF is a dual N-channel enhancement mode MOSFET array manufactured by Infineon Technologies. It utilizes silicon technology and is housed in a surface-mount TSOP-6 package. The device features a drain-source breakdown voltage of 20 V and a continuous drain current rating of 2.7 A. Its maximum on-resistance is specified at 960 mOhms, with a gate charge of 4 nC. The component supports a gate-source voltage range of ±12 V and operates within a temperature range of -55°C to +150°C. Power dissipation is rated at 960 mW.

FET, MOSFET Arrays Feature Summary

• Dual configuration integrating two independent N-channel transistors in a single compact package for space-constrained designs.
• Enhancement mode operation utilizing standard silicon planar technology for reliable switching performance.

FET, MOSFET Arrays Applications

• Battery protection circuits requiring dual-channel isolation
• Low-voltage signal switching applications
• Power management modules in portable electronic devices

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering suffix to ensure the correct tape and reel packaging configuration matches your automated assembly requirements. Confirm RoHS compliance status through official documentation prior to integration. Check manufacturer announcements for lifecycle status updates to mitigate supply chain risks associated with obsolete components.

FET, MOSFET Arrays Selection Notes

Select this component when a dual N-channel topology is required within a limited footprint. The low gate charge facilitates efficient drive requirements in low-power environments. Ensure the thermal design accommodates the 960 mW power dissipation limit under expected load conditions.

FET, MOSFET Arrays Part Context

This part belongs to Infineon's discrete MOSFET portfolio, specifically designed for surface-mount applications. It serves as a dual-channel alternative to single-transistor solutions, simplifying board layout for balanced switching tasks. The TSOP-6 form factor supports high-density PCB arrangements common in modern consumer electronics.

FET, MOSFET Arrays Replacement Considerations

The IRF5810 is identified as an industry-standard equivalent transistor. Verify pin compatibility and electrical parameter alignment before substitution. Consult official datasheets to confirm functional equivalence for critical circuit parameters.