IRF60B217

Single FETs, MOSFETs Overview

The IRF60B217 is a discontinued single N-channel StrongIRFET power MOSFET manufactured by Infineon Technologies. It utilizes TO-220 through-hole packaging and operates with a maximum drain-source voltage of 60 V. The device supports a continuous drain current of 60 A at 25°C and dissipates up to 83 W of power. Key electrical characteristics include a maximum on-resistance of 9 mΩ at 10 V gate drive, a typical gate charge of 44 nC at 10 V, and a gate threshold voltage range of 2.1 V to 3.7 V. Junction temperature ranges from -55°C to 175°C.

Single FETs, MOSFETs Feature Summary

• StrongIRFET technology provides low on-resistance for efficient conduction in power switching applications.
• Enhanced thermal performance via optimized junction-to-case thermal resistance within the TO-220 package.
• Low gate charge characteristics facilitate faster switching speeds and reduced driver power requirements.

Single FETs, MOSFETs Applications

• DC-DC converters
• Motor control circuits
• Power management systems

Single FETs, MOSFETs Procurement Notes

This component is officially discontinued and no longer in production. Engineers must verify availability through secondary market channels or authorized distributors handling surplus stock. Designers should prioritize replacement strategies using newer Infineon alternatives to ensure long-term supply chain stability and compliance with current manufacturing standards.

Single FETs, MOSFETs Selection Notes

Select this part only for legacy system maintenance where pin compatibility and specific electrical parameters are critical constraints. Evaluate the trade-off between the TO-220 through-hole form factor and modern surface-mount options. Ensure gate drive voltages align with the specified threshold range to guarantee full enhancement and optimal RDS(on) performance during operation.

Single FETs, MOSFETs Part Context

The IRF60B217 belongs to Infineon's StrongIRFET family, designed for high-efficiency power switching. It represents an evolution in planar MOSFET technology, offering improved figure-of-merit compared to standard HEXFET devices. The TO-220 package provides robust mechanical mounting suitable for heatsink integration in industrial and consumer power electronics.

Single FETs, MOSFETs Replacement Considerations

Consult official Infineon documentation for qualified successor models within the StrongIRFET series. Verify that alternative components maintain compatible pinouts, thermal characteristics, and electrical ratings to ensure seamless integration without circuit redesign.