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IRF6100PBF is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET P-CH 20V 5.1A 4FLIPFET. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for IRF6100PBF
- Description：MOSFET P-CH 20V 5.1A 4FLIPFET
- Series：HEXFET®
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：20 V
- Current - Continuous Drain (Id) @ 25°C：5.1A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：2.5V, 4.5V
- Rds On (Max) @ Id, Vgs：65mOhm @ 5.1A, 4.5V
- Vgs(th) (Max) @ Id：1.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：21 nC @ 5 V
- Vgs (Max)：±12V
- Input Capacitance (Ciss) (Max) @ Vds：1230 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：2.2W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：4-FlipFet™
- Package / Case：4-FlipFet™
Single FETs, MOSFETs datasheet and documents for IRF6100PBF
Single FETs, MOSFETs Overview
The IRF6100PBF is a HEXFET Power MOSFET manufactured by Infineon Technologies, utilizing P-channel technology. It features a 20V drain-source voltage rating and supports a continuous drain current of 5.1A at 25°C ambient temperature. The device operates with gate drive voltages of 2.5V and 4.5V to minimize on-resistance, which reaches a maximum of 65 milliohms under specified conditions. Key electrical characteristics include a gate charge of 21nC at 5V and an input capacitance of 1230pF at 15V. The component is housed in a 4-FlipFet surface-mount package and is designed for operation within a junction temperature range of -55°C to 150°C.
Single FETs, MOSFETs Feature Summary
- Utilizes HEXFET power MOSFET technology for efficient switching performance.
- Features a compact 4-FlipFet surface-mount package design.
- Supports low-voltage logic-level gate driving capabilities.
Single FETs, MOSFETs Applications
- Low-side switching applications
- Power management circuits
- DC-DC converter topologies
Single FETs, MOSFETs Procurement Notes
Verify the manufacturer marking and date code against official Infineon documentation to confirm authenticity. Ensure the part number suffix matches the specific tape-and-reel or tube configuration required for your assembly process. Cross-reference the datasheet revision to confirm compliance with current RoHS standards and material content declarations before finalizing procurement orders.
Single FETs, MOSFETs Selection Notes
Select this component when a P-channel MOSFET with a 20V voltage rating is required for low-power switching tasks. The 4-FlipFet package offers a small footprint suitable for space-constrained designs. Consider the 5.1A continuous current limit and thermal dissipation requirements relative to the expected load profile and ambient operating conditions during circuit design.
Single FETs, MOSFETs Part Context
This component belongs to the HEXFET family of power MOSFETs produced by Infineon Technologies (formerly International Rectifier). The HEXFET series is engineered to provide high switching speeds and low on-resistance for various power conversion applications. The IRF6100PBF specifically addresses needs for low-voltage, moderate-current P-channel switching solutions in consumer and industrial electronics.
Single FETs, MOSFETs Replacement Considerations
Consult official Infineon replacement guides for verified cross-references. Do not assume functional equivalence with generic P-channel MOSFETs without verifying pinout compatibility, voltage ratings, and thermal characteristics against the original specifications.
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