IRF6620TR1

Description：MOSFET N-CH 20V 27A DIRECTFET
Series：HEXFET®
Mfr：Infineon Technologies
Package：Tape & Reel (TR)

SKU:61477b2a0313 Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

IRF6620TR1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 20V 27A DIRECTFET. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for IRF6620TR1

Description：MOSFET N-CH 20V 27A DIRECTFET
Series：HEXFET®
Mfr：Infineon Technologies
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：20 V
Current - Continuous Drain (Id) @ 25°C：27A (Ta), 150A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：2.7mOhm @ 27A, 10V
Vgs(th) (Max) @ Id：2.45V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：42 nC @ 4.5 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：4130 pF @ 10 V
FET Feature：-
Power Dissipation (Max)：2.8W (Ta), 89W (Tc)
Operating Temperature：-40°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：DIRECTFET™ MX
Package / Case：DirectFET™ Isometric MX

Single FETs, MOSFETs datasheet and documents for IRF6620TR1

IRF6620TR1

Single FETs, MOSFETs Overview

The IRF6620TR1 is a single N-channel HEXFET power MOSFET utilizing DirectFET MX packaging. It features a maximum drain-source voltage of 20 V and an on-resistance of 2.7 mΩ at VGS = 10 V, or 3.6 mΩ at VGS = 4.5 V. The device supports a continuous drain current of 27 A at TA = 25°C and 150 A at TC = 25°C. Total gate charge is typically 28 nC at 4.5 V. Thermal resistance from junction to case is 1.4 K/W, with a maximum operating junction temperature of 150°C.

Single FETs, MOSFETs Feature Summary

Combines advanced silicon technology with DirectFET packaging for ultra-low package inductance and minimal footprint.
Optimized for synchronous buck applications with high Cdv/dt-induced turn-on immunity.
Dual-sided cooling compatible design maximizes thermal transfer efficiency.
Low profile construction suitable for surface mount assembly techniques.

Single FETs, MOSFETs Applications

CPU core DC-DC converters
Synchronous buck converters
High frequency processor power supplies

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix TR1 indicates a 1000-unit quantity on a 7-inch reel, distinct from standard reel quantities. Confirm component status as discontinued if sourcing through secondary channels. Ensure application note AN-1035 guidelines are followed for manufacturing methods and soldering processes to maintain package integrity.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring low conduction and switching losses in compact form factors. The DirectFET MX package allows compatibility with existing SO-8 layout geometries. Evaluate thermal management requirements carefully, as dual-sided cooling significantly improves performance compared to standard single-side mounting configurations.

Single FETs, MOSFETs Part Context

This part belongs to the HEXFET family of power MOSFETs manufactured by Infineon Technologies (formerly International Rectifier). It utilizes the proprietary DirectFET ISOMETRIC packaging technology, which integrates the die directly onto a substrate to reduce parasitic inductance and improve thermal characteristics compared to traditional leaded packages.