IRF6723M2DTR1P

FET, MOSFET Arrays Overview

The IRF6723M2DTR1P is a dual N-channel Power MOSFET in a DirectFET package, designed for high-side applications. It integrates two switches with a 30V drain-source voltage rating and a maximum continuous drain current of 47A at case temperature of 25°C. The device features ultra-low package inductance and low gate charge (9.4nC typ) to minimize switching losses. With an on-resistance of 5.2mΩ at 10V gate drive, it supports efficient multiphase DC-DC converters for processor power delivery.

FET, MOSFET Arrays Feature Summary

• Integrates two optimized high-side MOSFET switches into a single medium can DirectFET package
• Features ultra-low package inductance and low gate resistance for significant switching loss reduction
• Supports dual-sided cooling to maximize thermal transfer and improve thermal resistance
• Compatible with existing surface mount layout geometries and standard reflow soldering techniques

FET, MOSFET Arrays Applications

• Multiphase DC-DC converters for processor power delivery
• High frequency switching applications requiring reduced losses
• High efficiency power systems utilizing dual common drain control

FET, MOSFET Arrays Procurement Notes

Verify the component matches the specific DirectFET/G153 outline and substrate dimensions provided in application note AN-1035. Confirm that the ordering suffix corresponds to the tape and reel quantity of 4800 parts. Ensure the manufacturing methods strictly follow the recommended stencil and substrate design guidelines for proper assembly.

FET, MOSFET Arrays Selection Notes

Select this component when space constraints require replacing two discrete MOSFETs with a footprint equivalent to a SO-8. Consider its suitability for applications demanding high power density and low profile heights under 0.7 mm. Evaluate the thermal performance benefits of dual-sided cooling against single-sided mounting requirements.

FET, MOSFET Arrays Part Context

This part belongs to the DirectFET family, combining HEXFET silicon technology with advanced packaging. It replaces discrete solutions by offering a compact form factor while maintaining robust electrical characteristics. The integration facilitates simplified PCB layout and improved system reliability through reduced parasitic inductances.

FET, MOSFET Arrays Replacement Considerations

Direct replacements include the IRF6723M2DPbF. Verify pinout compatibility and ensure the substitute maintains the same DirectFET/G153 mechanical outline and thermal interface specifications.