IRF6802SDTRPBF

FET, MOSFET Arrays Overview

The IRF6802SDTRPBF is a silicon N-channel power MOSFET manufactured by International Rectifier, now part of Infineon Technologies. It features a low-profile surface-mount package with a maximum height under 0.7 mm. The device is optimized for high-frequency switching applications, specifically designed for CPU core DC-DC converters and synchronous buck converter control FET sockets. Key electrical characteristics include a drain-source voltage rating of 25 V, a gate-source voltage limit of ±16 V, and a typical on-resistance of 3.2 mΩ at 10 V gate drive or 4.5 mΩ at 4.5 V. Total gate charge is typically 8.8 nC.

FET, MOSFET Arrays Feature Summary

• Optimized for high-frequency switching to minimize conduction and switching losses in power conversion circuits.
• Dual-sided cooling compatible design facilitates efficient thermal management in compact form factors.
• Low package inductance structure supports stable operation in high-speed digital power applications.

FET, MOSFET Arrays Applications

• CPU core DC-DC converters
• Synchronous buck converter control FETs
• General-purpose low-voltage power switching

FET, MOSFET Arrays Procurement Notes

Verify the manufacturer designation carefully, as International Rectifier operations were acquired by Infineon Technologies. Confirm that the specific suffix TRPBF indicates the tape-and-reel packaging format required for automated assembly processes. Ensure compliance with RoHS directives and lead-free specifications matches current project requirements before finalizing procurement orders.

FET, MOSFET Arrays Selection Notes

Select this component when designing low-voltage, high-current power stages requiring minimal footprint and fast switching speeds. The 25 V rating suits 3.3 V and 5 V distribution networks. Evaluate thermal performance based on the dual-sided cooling capability if operating near maximum current limits. Compare total gate charge against driver capabilities to ensure adequate switching speed without excessive drive current demands.

FET, MOSFET Arrays Part Context

This device belongs to the HEXFET family of power MOSFETs from International Rectifier. These components are engineered for efficiency in power management integrated circuits. The SD series denotes a specific small-outline surface-mount package variant designed to replace larger through-hole or standard SMD packages in space-constrained electronic designs.

FET, MOSFET Arrays FAQ

Is the IRF6802SDTRPBF suitable for high-side switching?

Yes, it is an N-channel MOSFET commonly used in synchronous buck configurations where it serves as the high-side switch, provided appropriate gate drive voltage is maintained relative to the source.

What is the maximum junction temperature?

The maximum operating junction temperature is specified as 150 °C.

Does this component support dual-sided cooling?

Yes, the datasheet explicitly states that the package is compatible with dual-sided cooling techniques to enhance thermal dissipation.