ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
IRF7102 is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET 2N-CH 50V 2A 8SO. Review the specifications below when checking this part for your BOM.
FET, MOSFET Arrays specifications for IRF7102
- Description：MOSFET 2N-CH 50V 2A 8SO
- Series：HEXFET®
- Mfr：Infineon Technologies
- Package：Tube
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：50V
- Current - Continuous Drain (Id) @ 25°C：2A
- Rds On (Max) @ Id, Vgs：300mOhm @ 1.5A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：6.6nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：120pF @ 25V
- Power - Max：2W
- Operating Temperature：-
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SO
- Grade：-
- Qualification：-
FET, MOSFET Arrays datasheet and documents for IRF7102
FET, MOSFET Arrays FAQ
Is the IRF7102 available in a dual-channel configuration?
No, the IRF7102 is a single N-Channel MOSFET. The dual-channel variant within this series is designated as IRF7103.
What is the maximum drain-source voltage for the IRF7102?
The maximum drain-source voltage (Vds) rating for the IRF7102 is 50 V.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
