IRF7103Q

FET, MOSFET Arrays Overview

The IRF7103Q is a dual N-channel power MOSFET from Infineon Technologies, utilizing fourth-generation HEXFET planar technology. It features a SO-8 surface-mount package with enhanced thermal characteristics and dual-die capability. Key electrical parameters include a drain-source breakdown voltage (Vds) of 50 V, a continuous drain current (Id) of 3 A, and a maximum on-resistance (Rds(on)) of 130 mΩ at 10 V gate drive. The device supports a gate-source voltage range of ±20 V, with a typical gate charge of 12 nC. It operates within a temperature range of -55°C to +150°C junction temperature.

FET, MOSFET Arrays Feature Summary

• Dual N-channel configuration in a single SO-8 package for space-efficient designs
• Advanced HEXFET processing for ultra-low on-resistance per silicon area
• Fast switching speed with ruggedized device design
• Customized leadframe for enhanced thermal performance

FET, MOSFET Arrays Applications

• DC-DC converter circuits
• Motor control applications
• Power management systems

FET, MOSFET Arrays Procurement Notes

Verify the specific suffix 'Q' against official Infineon documentation to confirm automotive qualification status or specific tape-and-reel packaging variations. Ensure the ordered part number matches the exact datasheet revision required for your design. Cross-reference with authorized distributors to confirm availability and authenticity. Check for any specific handling instructions related to moisture sensitivity levels.

FET, MOSFET Arrays Selection Notes

Select this component when a compact dual N-channel solution is required for low-voltage power switching. The 50 V rating and 3 A current capacity suit general-purpose power applications. Consider the SO-8 package's thermal advantages over standard variants if board space is constrained. Verify that the 130 mΩ on-resistance meets the efficiency requirements of the target circuit under expected operating temperatures.

FET, MOSFET Arrays Part Context

This component belongs to the Infineon HEXFET family, known for high-efficiency power switching. The IRF7103 series represents an evolution of International Rectifier's legacy products, now maintained by Infineon. The dual-channel architecture allows for half-bridge or synchronous rectification configurations within a minimal footprint, supporting modern miniaturization trends in consumer and industrial electronics.

FET, MOSFET Arrays Replacement Considerations

IRF7103PBF: Industry-standard pinout equivalent without the 'Q' suffix. IRF7103TRPBF: Tape-and-reel version of the standard part. IRF7103IPBF: Through-hole variant for different mounting requirements.