IRF7103TR

FET, MOSFET Arrays Overview

The IRF7103TR is a dual N-channel MOSFET manufactured by UMW in an SOP-8 surface-mount package. It features a drain-source voltage (VDS) of 50V and a continuous drain current (ID) of 2A at 25°C. The device exhibits ultra-low on-resistance, specified as 130mΩ maximum at VGS=10V and 40mΩ maximum at VGS=4.5V. Gate threshold voltage ranges from 1.0V to 3.0V with a typical value of 2.0V at VGS=10V and ID=2A. Total gate charge is 12nC typical at VGS=10V. Power dissipation is rated at 2W, with a junction temperature range of -55°C to +150°C.

FET, MOSFET Arrays Feature Summary

• Dual N-channel configuration with customized leadframe for enhanced thermal characteristics and dual-die capability
• Ultra-low on-resistance achieved through advanced process technology
• Fast switching performance with dynamic dv/dt rating

FET, MOSFET Arrays Applications

• Power management circuits requiring compact dual-switch solutions
• DC-DC converters and power supplies
• Motor control applications

FET, MOSFET Arrays Procurement Notes

Verify the manufacturer marking matches UMT or UMW branding on the component body. Confirm the package type is SOP-8 and check for tape and reel delivery mode if ordering in bulk quantities. Ensure the part number suffix TR corresponds to the required packaging format.

FET, MOSFET Arrays Selection Notes

Select this component when a dual N-channel MOSFET with low RDS(on) is needed in a small footprint. The SOP-8 package allows for efficient board space utilization compared to discrete single devices. Consider the 50V voltage rating and 2A current capacity for appropriate load requirements.

FET, MOSFET Arrays Part Context

This component belongs to the IRF7103 series of dual N-channel MOSFETs. It is designed as a surface-mount alternative to traditional through-hole packages, offering improved thermal performance through a modified leadframe structure. The dual-die design enables multiple functions within a single package.

FET, MOSFET Arrays Replacement Considerations

Cross-reference with other dual N-channel MOSFETs in SOP-8 packages having similar VDS and RDS(on) specifications. Verify pinout compatibility and thermal resistance values before substitution.