IRF7103TRPBF

FET, MOSFET Arrays Overview

The IRF7103TRPBF is a dual N-channel HEXFET power MOSFET manufactured by Infineon Technologies. It features a 50V drain-source voltage rating and a continuous drain current of 3A at 25°C. The device exhibits a maximum on-resistance of 130mΩ at 10V gate drive and 200mΩ at 4.5V. It operates within a junction temperature range up to 150°C and offers a thermal resistance from junction to ambient of 62.5 K/W. The component utilizes an SO-8 surface-mount package.

FET, MOSFET Arrays Feature Summary

• Dual N-channel configuration with planar HEXFET technology for enhanced performance
• Ultra-low on-resistance optimized for efficient power switching applications
• Fast switching capabilities supported by dynamic dv/dt rating
• Customized leadframe design in SO-8 package for improved thermal characteristics

FET, MOSFET Arrays Applications

• Synchronous rectification circuits
• DC-DC converter modules
• Power management systems requiring low loss switching

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering suffix against official Infineon documentation to ensure correct packaging and tape-and-reel specifications. Confirm that the requested part matches the exact electrical parameters required for the target application, particularly regarding the dual-channel configuration and voltage ratings. Cross-reference the manufacturer part number with authorized distributor catalogs to validate authenticity and current production status before finalizing procurement orders.

FET, MOSFET Arrays Selection Notes

Select this component when designing circuits requiring a compact dual N-channel solution with moderate voltage handling. The SO-8 package facilitates surface-mount assembly while providing adequate thermal dissipation for low-power applications. Ensure the gate drive voltage aligns with the specified thresholds to achieve the rated on-resistance values efficiently.

FET, MOSFET Arrays Part Context

This device belongs to the HEXFET family of power MOSFETs, representing Infineon's advanced silicon technology. The IRF7103 series is engineered for high-efficiency power conversion, combining low conduction losses with robust switching performance. It serves as a key component in modern electronic systems where space constraints and thermal management are critical design factors.

FET, MOSFET Arrays Replacement Considerations

Consult official cross-reference guides for verified substitutes. Ensure any replacement maintains identical pinout compatibility, voltage ratings, and thermal characteristics to guarantee circuit functionality without redesign.