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IRF7103TRPBFXTMA1 is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET 2N-CH 50V 3A 8DSO-902. Review the specifications below when checking this part for your BOM.
The IRF7103TRPBFXTMA1 is a dual N-channel HEXFET power MOSFET manufactured by Infineon Technologies. It features a 50V drain-source breakdown voltage and supports a continuous drain current of 3A at 25°C. The device exhibits a maximum on-resistance of 130mΩ at 10V gate drive. It operates within a temperature range of -55°C to +150°C junction temperature, with a power dissipation rating of 2W. The component utilizes an SO-8 surface-mount package and incorporates planar FET technology for enhanced thermal performance.
Verify the complete part number including the XTMA1 suffix against official Infineon documentation to ensure correct reel packaging specifications. Confirm RoHS compliance status through the manufacturer's certified datasheet before integration. Validate that the SO-8 package dimensions match the target PCB footprint requirements precisely.
Select this component when a dual N-channel topology is required in a small form factor. The 50V rating suits low-voltage applications where higher voltage ratings are unnecessary. Ensure the 3A current capacity meets the load requirements while accounting for thermal derating at elevated ambient temperatures.
This device belongs to the HEXFET family of power MOSFETs from Infineon Technologies. It represents an evolution of standard discrete transistors by integrating two channels into one package. The SO-8 variant offers improved thermal handling compared to traditional DIP packages, supporting modern surface-mount assembly processes.
IRF7103TRPBF serves as a direct equivalent alternative within the same product family. Verify pin compatibility and thermal resistance values when substituting components to maintain circuit performance integrity.
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